Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

I. E. Morales-Fernández, M. I. Medina-Montes, L. A. González, B. Gnade, M. A. Quevedo-López, R. Ramírez-Bon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Chemically deposited lead sulfide (PbS) thin films were used as the semiconductor active layer in common-gated thin film transistors. The PbS films were deposited at room temperature on SiO2/Si-p wafers. Lift-off was used to define source and drain contacts (gold, Au) on top of the PbS layer with channel lengths ranging from 10 to 80 μm. The Si-p wafer with a back chromium-gold contact served as the common gate for the transistors. Experimental results show that as-deposited PbS are p-type in character and the devices exhibit typical drain current versus source-drain voltage (I DS-VDS) behavior as a function of gate voltage. The values of threshold voltage of the devices were in the range from -7.8 to 1.0 V, depending on the channel length. Channel mobility was approximately 10 - 4 cm2V- 1 s- 1. The low channel mobility in the devices is attributed to the influence of the microstructure of the nanocrystalline thin films. The electrical performance of the PbS-based devices was improved by thermal annealing the devices in forming gas at 250 °C. In particular, channel mobility increased and threshold voltage decreased as a consequence of the thermal annealing.

Original languageEnglish
Pages (from-to)512-516
Number of pages5
JournalThin Solid Films
Issue number1
StatePublished - 29 Oct 2010

Bibliographical note

Funding Information:
This work was supported by CONACYT through the Becas Mixtas and Sabbatical Programs.


  • Chemical bath deposition
  • Field effect transistors
  • Lead sulfide


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