Electrical characterization of process induced effects on non-silicon devices

Chadwin D. Young; Pavel Bolshakov; Rodolfo A. Rodriguez-Davila; Peng Zhao; Ava Khosravi; Israel Mejia; Manuel Quevedo-Lopez; Christopher L. Hinkle; Robert M. Wallace

doi:10.1109/ICICDT.2018.8399784

Electrical characterization of process induced effects on non-silicon devices

Chadwin D. Young, Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L. Hinkle, Robert M. Wallace

Departamento de Investigación en Polímeros y Materiales

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The influence of the fabrication process on the electrical performance of ZnO and MoS₂ devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO₂ and Al₂O₃ gate dielectrics on ZnO or MoS₂ semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

Original language	English
Title of host publication	ICICDT 2018 - International Conference on IC Design and Technology, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	173-176
Number of pages	4
ISBN (Electronic)	9781538625491
DOIs	https://doi.org/10.1109/ICICDT.2018.8399784
State	Published - 27 Jun 2018
Event	2018 International Conference on IC Design and Technology, ICICDT 2018 - Otranto, Italy Duration: 4 Jun 2018 → 6 Jun 2018

Publication series

Name	ICICDT 2018 - International Conference on IC Design and Technology, Proceedings

Conference

Conference	2018 International Conference on IC Design and Technology, ICICDT 2018
Country/Territory	Italy
City	Otranto
Period	4/06/18 → 6/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

MoS
TMD
ZnO
high-k
thin-film transistor
transistor

Access to Document

10.1109/ICICDT.2018.8399784

Cite this

Young, C. D., Bolshakov, P., Rodriguez-Davila, R. A., Zhao, P., Khosravi, A., Mejia, I., Quevedo-Lopez, M., Hinkle, C. L., & Wallace, R. M. (2018). Electrical characterization of process induced effects on non-silicon devices. In ICICDT 2018 - International Conference on IC Design and Technology, Proceedings (pp. 173-176). (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2018.8399784

Young, Chadwin D. ; Bolshakov, Pavel ; Rodriguez-Davila, Rodolfo A. et al. / Electrical characterization of process induced effects on non-silicon devices. ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 173-176 (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings).

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title = "Electrical characterization of process induced effects on non-silicon devices",

abstract = "The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.",

keywords = "MoS, TMD, ZnO, high-k, thin-film transistor, transistor",

author = "Young, {Chadwin D.} and Pavel Bolshakov and Rodriguez-Davila, {Rodolfo A.} and Peng Zhao and Ava Khosravi and Israel Mejia and Manuel Quevedo-Lopez and Hinkle, {Christopher L.} and Wallace, {Robert M.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Conference on IC Design and Technology, ICICDT 2018 ; Conference date: 04-06-2018 Through 06-06-2018",

year = "2018",

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doi = "10.1109/ICICDT.2018.8399784",

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series = "ICICDT 2018 - International Conference on IC Design and Technology, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Young, CD, Bolshakov, P, Rodriguez-Davila, RA, Zhao, P, Khosravi, A, Mejia, I, Quevedo-Lopez, M, Hinkle, CL & Wallace, RM 2018, Electrical characterization of process induced effects on non-silicon devices. in ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. ICICDT 2018 - International Conference on IC Design and Technology, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 173-176, 2018 International Conference on IC Design and Technology, ICICDT 2018, Otranto, Italy, 4/06/18. https://doi.org/10.1109/ICICDT.2018.8399784

Electrical characterization of process induced effects on non-silicon devices. / Young, Chadwin D.; Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A. et al.
ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 173-176 (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Young, Chadwin D.

AU - Bolshakov, Pavel

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AU - Khosravi, Ava

AU - Mejia, Israel

AU - Quevedo-Lopez, Manuel

AU - Hinkle, Christopher L.

AU - Wallace, Robert M.

PY - 2018/6/27

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N2 - The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

AB - The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

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KW - TMD

KW - ZnO

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KW - thin-film transistor

KW - transistor

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DO - 10.1109/ICICDT.2018.8399784

M3 - Contribución a la conferencia

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SP - 173

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BT - ICICDT 2018 - International Conference on IC Design and Technology, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Young CD, Bolshakov P, Rodriguez-Davila RA, Zhao P, Khosravi A, Mejia I et al. Electrical characterization of process induced effects on non-silicon devices. In ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 173-176. (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings). doi: 10.1109/ICICDT.2018.8399784

Electrical characterization of process induced effects on non-silicon devices

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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