Electrical characterization of process induced effects on non-silicon devices

Chadwin D. Young, Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L. Hinkle, Robert M. Wallace

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The influence of the fabrication process on the electrical performance of ZnO and MoS2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics introduce new challenges in obtaining optimal device performance. HfO2 and Al2O3 gate dielectrics on ZnO or MoS2 semiconducting layers are electrically characterized to gain understanding of the influence process-induced effects have on transistor performance.

Original languageEnglish
Title of host publicationICICDT 2018 - International Conference on IC Design and Technology, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages173-176
Number of pages4
ISBN (Electronic)9781538625491
DOIs
StatePublished - 27 Jun 2018
Externally publishedYes
Event2018 International Conference on IC Design and Technology, ICICDT 2018 - Otranto, Italy
Duration: 4 Jun 20186 Jun 2018

Publication series

NameICICDT 2018 - International Conference on IC Design and Technology, Proceedings

Conference

Conference2018 International Conference on IC Design and Technology, ICICDT 2018
Country/TerritoryItaly
CityOtranto
Period4/06/186/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • MoS
  • TMD
  • ZnO
  • high-k
  • thin-film transistor
  • transistor

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