Electrical stress in CdS thin film transistors using HfO<inf>2</inf> gate dielectric

R. García, I. Mejia, J. E. Molinar-Solis, A. L. Salas-Villasenor, A. Morales, B. García, M. A. Quevedo-Lopez, M. Alemán

Research output: Contribution to journalArticle

5 Scopus citations
Original languageAmerican English
JournalApplied Physics Letters
DOIs
StatePublished - 20 May 2013
Externally publishedYes

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    García, R., Mejia, I., Molinar-Solis, J. E., Salas-Villasenor, A. L., Morales, A., García, B., Quevedo-Lopez, M. A., & Alemán, M. (2013). Electrical stress in CdS thin film transistors using HfO<inf>2</inf> gate dielectric. Applied Physics Letters. https://doi.org/10.1063/1.4807720