Electrical transport characterization of Al and Sn doped Mg2Si thin films

Bo Zhang, Tao Zheng, Ce Sun, Zaibing Guo, Moon J. Kim, Husam N. Alshareef, Manuel Quevedo-Lopez, Bruce E. Gnade*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Original languageEnglish
Pages (from-to)156-160
Number of pages5
JournalJournal of Alloys and Compounds
StatePublished - 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.


  • Electrical properties
  • Hall measurements
  • Sn, Al doped MgSi films
  • Sputtering
  • Thermoelectric
  • Thin films


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