Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field

L. Ferrer-Galindo; Ri Betancourt-Riera; Re Betancourt-Riera; R. Riera

doi:10.1016/j.physb.2018.06.017

Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field

L. Ferrer-Galindo, Ri Betancourt-Riera, Re Betancourt-Riera, R. Riera

Universidad de Sonora

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

© 2018 In this paper studies an electron Raman scattering process for a semiconductor, coupled and asymmetrical double quantum well. Then, the presence of an electron in a single conduction band is considered. In addition, the system is subjected to an external electric field. To carry out this study, the net Raman gain and the differential cross section are calculated. The emission spectra are interpreted and discussed. For this, we obtain the exact solutions of the electron states considering the envelope function approximation and a single parabolic conduction band, which is split into a sub-bands system due to confinement. Furthermore, the effect of the electric field on the electron states and in the differential cross section is studied. To illustrate our findings, we have considered a system growing in a GaAs/AlxGa1−xAs matrix.

Original language	American English
Pages (from-to)	215-221
Number of pages	7
Journal	Physica B: Condensed Matter
DOIs	https://doi.org/10.1016/j.physb.2018.06.017
State	Published - 15 Sep 2018

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@article{024339d42eab455a93c797309485696e,

title = "Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field",

abstract = "{\textcopyright} 2018 In this paper studies an electron Raman scattering process for a semiconductor, coupled and asymmetrical double quantum well. Then, the presence of an electron in a single conduction band is considered. In addition, the system is subjected to an external electric field. To carry out this study, the net Raman gain and the differential cross section are calculated. The emission spectra are interpreted and discussed. For this, we obtain the exact solutions of the electron states considering the envelope function approximation and a single parabolic conduction band, which is split into a sub-bands system due to confinement. Furthermore, the effect of the electric field on the electron states and in the differential cross section is studied. To illustrate our findings, we have considered a system growing in a GaAs/AlxGa1−xAs matrix.",

author = "L. Ferrer-Galindo and Ri Betancourt-Riera and Re Betancourt-Riera and R. Riera",

year = "2018",

month = sep,

day = "15",

doi = "10.1016/j.physb.2018.06.017",

language = "American English",

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journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field

AU - Ferrer-Galindo, L.

AU - Betancourt-Riera, Ri

AU - Betancourt-Riera, Re

AU - Riera, R.

PY - 2018/9/15

Y1 - 2018/9/15

N2 - © 2018 In this paper studies an electron Raman scattering process for a semiconductor, coupled and asymmetrical double quantum well. Then, the presence of an electron in a single conduction band is considered. In addition, the system is subjected to an external electric field. To carry out this study, the net Raman gain and the differential cross section are calculated. The emission spectra are interpreted and discussed. For this, we obtain the exact solutions of the electron states considering the envelope function approximation and a single parabolic conduction band, which is split into a sub-bands system due to confinement. Furthermore, the effect of the electric field on the electron states and in the differential cross section is studied. To illustrate our findings, we have considered a system growing in a GaAs/AlxGa1−xAs matrix.

AB - © 2018 In this paper studies an electron Raman scattering process for a semiconductor, coupled and asymmetrical double quantum well. Then, the presence of an electron in a single conduction band is considered. In addition, the system is subjected to an external electric field. To carry out this study, the net Raman gain and the differential cross section are calculated. The emission spectra are interpreted and discussed. For this, we obtain the exact solutions of the electron states considering the envelope function approximation and a single parabolic conduction band, which is split into a sub-bands system due to confinement. Furthermore, the effect of the electric field on the electron states and in the differential cross section is studied. To illustrate our findings, we have considered a system growing in a GaAs/AlxGa1−xAs matrix.

U2 - 10.1016/j.physb.2018.06.017

DO - 10.1016/j.physb.2018.06.017

M3 - Article

SP - 215

EP - 221

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -

Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field

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