Abstract
In this study, we report the recoverable energy density (Urec) of lead-free antiferroelectric perovskite 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3 (BNT-BT) ultrathin films deposited directly on highly boron-doped silicon (p-Si) by a pulsed laser deposition method. Two pressure values were used in the growing conditions, 4.67 × 10-5 and 13.3 Pa, at a fixed substrate temperature of 700 °C. After that, the films were subjected to postannealing under an oxidizing atmosphere at 700 °C for 1 h. A conventional lithography process was used to define vertical metal-ferroelectric-p-Si structures and evaluate the energy storage characteristics. Cross-sectional SEM images showed achieved thicknesses of about 11-13 nm. The high electric field strengths of 3.8 and 4.5 MV/cm supported for BNT-BT ultrathin films deposited at 4.67 × 10-5 and 13.3 Pa, respectively, imply a high-quality perovskite thin-film growth on p-Si. The 11-nm ultrathin film grown at 13.3 Pa showed higher Urec, efficiency (η), and a maximum applied electric field of 30 J/cm3, 83%, and 4.5 MV/cm, respectively.
| Original language | English |
|---|---|
| Article number | 033417 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 40 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 May 2022 |
Bibliographical note
Funding Information:This work was financially supported by Projects CB 240460 and LN2019-299082 of CONACYT and Prodep 2018-Cinvestav-CA-17. The authors thank the National Laboratory, LIDTRA, for the infrastructure facilities provided for the realization of this work. J.J.S. is grateful to CONACYT for the financial support provided through the mixed scholarship program. Research reported in this publication was supported by funding from the University of Texas at Dallas (UTD). Additionally, the authors thank the laboratory technicians Rivelino Flores Farias and Martín Adelaido Hernández Landaverde for providing their support.
Publisher Copyright:
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