Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al<inf>2</inf>O<inf>3</inf>

R. A. Rodriguez-Davila, R. A. Chapman, M. Catalano, M. Quevedo-Lopez, C. D. Young

Research output: Contribution to conferencePaper

Original languageAmerican English
DOIs
StatePublished - 1 Apr 2020
Externally publishedYes
EventIEEE International Reliability Physics Symposium Proceedings -
Duration: 1 Apr 2020 → …

Conference

ConferenceIEEE International Reliability Physics Symposium Proceedings
Period1/04/20 → …

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    Rodriguez-Davila, R. A., Chapman, R. A., Catalano, M., Quevedo-Lopez, M., & Young, C. D. (2020). Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al<inf>2</inf>O<inf>3</inf>. Paper presented at IEEE International Reliability Physics Symposium Proceedings, . https://doi.org/10.1109/IRPS45951.2020.9129345