Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669))

M. A. Quevedo-Lopez; M. El-Bouanani; M. J. Kim; B. E. Gnade; R. M. Wallace; M. R. Visokay; A. LiFatou; J. J. Chambers; L. Colombo

doi:10.1063/1.1606888

Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669))

M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, J. J. Chambers, L. Colombo

Research output: Contribution to journal › Erratum › peer-review

2 Scopus citations

Original language	American English
Pages (from-to)	1679
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.1606888
State	Published - 25 Aug 2003
Externally published	Yes

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Quevedo-Lopez, M. A., El-Bouanani, M., Kim, M. J., Gnade, B. E., Wallace, R. M., Visokay, M. R., LiFatou, A., Chambers, J. J., & Colombo, L. (2003). Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669)). Applied Physics Letters, 1679. https://doi.org/10.1063/1.1606888

Quevedo-Lopez, M. A. ; El-Bouanani, M. ; Kim, M. J. ; Gnade, B. E. ; Wallace, R. M. ; Visokay, M. R. ; LiFatou, A. ; Chambers, J. J. ; Colombo, L. / Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669)). In: Applied Physics Letters. 2003 ; pp. 1679.

@article{750b8504193f49518c984d4368f12961,

title = "Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSixOyfilms (Applied Physics Letters (2003) 82 (4669))",

author = "Quevedo-Lopez, {M. A.} and M. El-Bouanani and Kim, {M. J.} and Gnade, {B. E.} and Wallace, {R. M.} and Visokay, {M. R.} and A. LiFatou and Chambers, {J. J.} and L. Colombo",

year = "2003",

month = aug,

day = "25",

doi = "10.1063/1.1606888",

language = "American English",

pages = "1679",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

}

Quevedo-Lopez, MA, El-Bouanani, M, Kim, MJ, Gnade, BE, Wallace, RM, Visokay, MR, LiFatou, A, Chambers, JJ & Colombo, L 2003, 'Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669))', Applied Physics Letters, pp. 1679. https://doi.org/10.1063/1.1606888

Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669)). / Quevedo-Lopez, M. A.; El-Bouanani, M.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Visokay, M. R.; LiFatou, A.; Chambers, J. J.; Colombo, L.

In: Applied Physics Letters, 25.08.2003, p. 1679.

Research output: Contribution to journal › Erratum › peer-review

TY - JOUR

T1 - Erratum: Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSixOyfilms (Applied Physics Letters (2003) 82 (4669))

AU - Quevedo-Lopez, M. A.

AU - El-Bouanani, M.

AU - Kim, M. J.

AU - Gnade, B. E.

AU - Wallace, R. M.

AU - Visokay, M. R.

AU - LiFatou, A.

AU - Chambers, J. J.

AU - Colombo, L.

PY - 2003/8/25

Y1 - 2003/8/25

U2 - 10.1063/1.1606888

DO - 10.1063/1.1606888

M3 - Erratum

SP - 1679

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Erratum: Effect of N incorporation on boron penetration from p<sup>+</sup>polycrystalline-Si through HfSi<inf>x</inf>O<inf>y</inf>films (Applied Physics Letters (2003) 82 (4669))

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