Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

L. Miotti, K. P. Bastos, G. V. Soares, C. Driemeier, R. P. Pezzi, J. Morais, I. J.R. Baumvol, A. L.P. Rotondaro*, M. R. Visokay, J. J. Chambers, M. Quevedo-Lopez, L. Colombo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N 2 and O 2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O 2, ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.

Original languageEnglish
Pages (from-to)4460-4462
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
StatePublished - 8 Nov 2004

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