Exciton 4.29 and 3.65 eV luminescence in CsI:Tl and CsI:Pb

S. Zazubovich*, R. Aceves, M. Barboza Flores, P. Fabeni, T. Kärner, G. P. Pazzi, R. Perez Salas, N. Jaanson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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The 4.29 and 3.65 eV emission of CsI:Pb crystals has been studied at 4.2-300 K under excitation in the exciton as well as in the lead-induced absorption bands. The results have been compared with those obtained for the corresponding emission of CsI:Tl as well as for the emission of the on-centre and the off-centre self-trapped exciton in a pure CsI crystal. It has been found that, unlike the case in CsI:Tl, in CsI:Pb the 4.29 and 3.65 eV emission is excited not only in the exciton bands but also in the absorption bands of electron impurity centres optically created at 4.2 K together with the VK centres by photons of 5.1-4.0 eV energy. In the latter case this emission is of {e- + VK} nature. The optical creation of the VK centres has been confirmed by luminescence polarization and ESR spectrum measurements.

Original languageEnglish
Pages (from-to)7249-7256
Number of pages8
JournalJournal of Physics Condensed Matter
Issue number34
StatePublished - 25 Aug 1997
Externally publishedYes


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