Abstract
The 4.29 and 3.65 eV emission of CsI:Pb crystals has been studied at 4.2-300 K under excitation in the exciton as well as in the lead-induced absorption bands. The results have been compared with those obtained for the corresponding emission of CsI:Tl as well as for the emission of the on-centre and the off-centre self-trapped exciton in a pure CsI crystal. It has been found that, unlike the case in CsI:Tl, in CsI:Pb the 4.29 and 3.65 eV emission is excited not only in the exciton bands but also in the absorption bands of electron impurity centres optically created at 4.2 K together with the VK centres by photons of 5.1-4.0 eV energy. In the latter case this emission is of {e- + VK} nature. The optical creation of the VK centres has been confirmed by luminescence polarization and ESR spectrum measurements.
Original language | English |
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Pages (from-to) | 7249-7256 |
Number of pages | 8 |
Journal | Journal of Physics Condensed Matter |
Volume | 9 |
Issue number | 34 |
DOIs | |
State | Published - 25 Aug 1997 |
Externally published | Yes |