Abstract
A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended Hückel theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work.
Original language | English |
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Pages (from-to) | 952-956 |
Number of pages | 5 |
Journal | Surface Science |
Volume | 532-535 |
DOIs | |
State | Published - 10 Jun 2003 |
Event | Proceedings of the 7th International Conference on Nanometer - Malmo, Sweden Duration: 29 Aug 2002 → 31 Aug 2002 |
Bibliographical note
Funding Information:We would like to thank A. Tiznado and C. González for valuable technical assistance. This work was partially supported by CONACYT-México (project number 139274-E), PAICYT-UANL-México (project number CA750-02) and by DGAPA-UNAM.
Keywords
- Electron density, excitation spectra calculations
- Silicides
- X-ray photoelectron spectroscopy