Experimental and theoretical DOS of Co and Ni silicides

M. García-Méndez, M. H. Farías*, D. H. Galván-Martínez, A. Posada-Amarillas, G. Beamson

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended Hückel theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work.

Original languageEnglish
Pages (from-to)952-956
Number of pages5
JournalSurface Science
StatePublished - 10 Jun 2003
EventProceedings of the 7th International Conference on Nanometer - Malmo, Sweden
Duration: 29 Aug 200231 Aug 2002

Bibliographical note

Funding Information:
We would like to thank A. Tiznado and C. González for valuable technical assistance. This work was partially supported by CONACYT-México (project number 139274-E), PAICYT-UANL-México (project number CA750-02) and by DGAPA-UNAM.


  • Electron density, excitation spectra calculations
  • Silicides
  • X-ray photoelectron spectroscopy


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