Abstract
Thin film CdTe/CdS-based avalanche photodiodes (APDs) are fabricated and characterized successfully. A separated absorption and multiplication CdTe/CdS p-i-n-i-n APD is proposed, fabricated, and analyzed. Compared with the conventional p-i-n APD, the p-i-n-i-n structure reduces the probability of premature micro-plasma breakdown, raises the gain from 147 to 473 and reduces the work voltage from 29 V to 21 V. The responsivity of APDs can reach 60 AW -1 and the avalanche gain of the photodiodes is about 473 at 22 V. Considering that no previous report on CdTe/CdS-based APDs can be found, the results reported in this letter may promise a route to high-performance CdTe/CdS thin film photodiodes.
| Original language | English |
|---|---|
| Article number | 7857774 |
| Pages (from-to) | 489-492 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 38 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2017 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 1980-2012 IEEE.
Keywords
- Electron devices
- photomultipliers