Fabrication of MoS<inf>2</inf> thin film transistors via selective-area solution deposition methods

Yang Xi; Martha Isabel Serna; Lanxia Cheng; Yang Gao; Mahmoud Baniasadi; Rodolfo Rodriguez-Davila; Jiyoung Kim; Manuel A. Quevedo-Lopez; Majid Minary-Jolandan

doi:10.1039/c5tc00062a

Fabrication of MoS<inf>2</inf> thin film transistors via selective-area solution deposition methods

Yang Xi, Martha Isabel Serna, Lanxia Cheng, Yang Gao, Mahmoud Baniasadi, Rodolfo Rodriguez-Davila, Jiyoung Kim, Manuel A. Quevedo-Lopez, Majid Minary-Jolandan

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Original language	American English
Pages (from-to)	3842-3847
Number of pages	6
Journal	Journal of Materials Chemistry C
DOIs	https://doi.org/10.1039/c5tc00062a
State	Published - 28 Apr 2015
Externally published	Yes

Access to Document

10.1039/c5tc00062a

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84927779540&origin=inward

Fingerprint Dive into the research topics of 'Fabrication of MoS<inf>2</inf> thin film transistors via selective-area solution deposition methods'. Together they form a unique fingerprint.

Cite this

@article{213025ad313a467d96e82b475f6654ea,

title = "Fabrication of MoS2 thin film transistors via selective-area solution deposition methods",

author = "Yang Xi and Serna, {Martha Isabel} and Lanxia Cheng and Yang Gao and Mahmoud Baniasadi and Rodolfo Rodriguez-Davila and Jiyoung Kim and Quevedo-Lopez, {Manuel A.} and Majid Minary-Jolandan",

year = "2015",

month = apr,

day = "28",

doi = "10.1039/c5tc00062a",

language = "American English",

pages = "3842--3847",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

}

Fabrication of MoS<inf>2</inf> thin film transistors via selective-area solution deposition methods. / Xi, Yang; Serna, Martha Isabel; Cheng, Lanxia; Gao, Yang; Baniasadi, Mahmoud; Rodriguez-Davila, Rodolfo; Kim, Jiyoung; Quevedo-Lopez, Manuel A.; Minary-Jolandan, Majid.

In: Journal of Materials Chemistry C, 28.04.2015, p. 3842-3847.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

AU - Xi, Yang

AU - Serna, Martha Isabel

AU - Cheng, Lanxia

AU - Gao, Yang

AU - Baniasadi, Mahmoud

AU - Rodriguez-Davila, Rodolfo

AU - Kim, Jiyoung

AU - Quevedo-Lopez, Manuel A.

AU - Minary-Jolandan, Majid

PY - 2015/4/28

Y1 - 2015/4/28

U2 - 10.1039/c5tc00062a

DO - 10.1039/c5tc00062a

M3 - Article

SP - 3842

EP - 3847

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7534

ER -