Fabrication of MoS<inf>2</inf> thin film transistors via selective-area solution deposition methods

Yang Xi, Martha Isabel Serna, Lanxia Cheng, Yang Gao, Mahmoud Baniasadi, Rodolfo Rodriguez-Davila, Jiyoung Kim, Manuel A. Quevedo-Lopez, Majid Minary-Jolandan

Research output: Contribution to journalArticle

30 Scopus citations
Original languageAmerican English
Pages (from-to)3842-3847
Number of pages6
JournalJournal of Materials Chemistry C
DOIs
StatePublished - 28 Apr 2015
Externally publishedYes

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    Xi, Y., Serna, M. I., Cheng, L., Gao, Y., Baniasadi, M., Rodriguez-Davila, R., Kim, J., Quevedo-Lopez, M. A., & Minary-Jolandan, M. (2015). Fabrication of MoS<inf>2</inf> thin film transistors via selective-area solution deposition methods. Journal of Materials Chemistry C, 3842-3847. https://doi.org/10.1039/c5tc00062a