Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

Yang Xi; Martha Isabel Serna; Lanxia Cheng; Yang Gao; Mahmoud Baniasadi; Rodolfo Rodriguez-Davila; Jiyoung Kim; Manuel A. Quevedo-Lopez; Majid Minary-Jolandan

doi:10.1039/c5tc00062a

Fabrication of MoS₂ thin film transistors via selective-area solution deposition methods

Yang Xi
, Martha Isabel Serna
, Lanxia Cheng
, Yang Gao
, Mahmoud Baniasadi
, Rodolfo Rodriguez-Davila
, Jiyoung Kim
, Manuel A. Quevedo-Lopez
, Majid Minary-Jolandan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS₂) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS₂ grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS₂ thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS₂ on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm² V^-1 s^-1.

Original language	English
Pages (from-to)	3842-3847
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	16
DOIs	https://doi.org/10.1039/c5tc00062a
State	Published - 28 Apr 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2015.

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title = "Fabrication of MoS2 thin film transistors via selective-area solution deposition methods",

abstract = "We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V-1 s-1.",

author = "Yang Xi and Serna, \{Martha Isabel\} and Lanxia Cheng and Yang Gao and Mahmoud Baniasadi and Rodolfo Rodriguez-Davila and Jiyoung Kim and Quevedo-Lopez, \{Manuel A.\} and Majid Minary-Jolandan",

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doi = "10.1039/c5tc00062a",

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T1 - Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

AU - Xi, Yang

AU - Serna, Martha Isabel

AU - Cheng, Lanxia

AU - Gao, Yang

AU - Baniasadi, Mahmoud

AU - Rodriguez-Davila, Rodolfo

AU - Kim, Jiyoung

AU - Quevedo-Lopez, Manuel A.

AU - Minary-Jolandan, Majid

PY - 2015/4/28

Y1 - 2015/4/28

N2 - We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V-1 s-1.

AB - We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V-1 s-1.

UR - https://www.scopus.com/pages/publications/84927779540

U2 - 10.1039/c5tc00062a

DO - 10.1039/c5tc00062a

M3 - Artículo

SN - 2050-7534

VL - 3

SP - 3842

EP - 3847

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 16

ER -

Fabrication of MoS₂ thin film transistors via selective-area solution deposition methods

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