Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

E. M.A. Fuentes-Fernandez, A. M. Salomon-Preciado, B. E. Gnade, M. A. Quevedo-Lopez, P. Shah, H. N. Alshareef*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

Original languageEnglish
Pages (from-to)3898-3904
Number of pages7
JournalJournal of Electronic Materials
Volume43
Issue number11
DOIs
StatePublished - 1 Nov 2014
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2014 The Minerals, Metals & Materials Society.

Keywords

  • Energy harvesting
  • cantilever
  • integration
  • perovskite
  • piezoelectric
  • relaxor

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