This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.
|Title of host publication||2022 IEEE 23rd Latin American Test Symposium, LATS 2022|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - 2022|
|Event||23rd IEEE Latin American Test Symposium, LATS 2022 - Montevideo, Uruguay|
Duration: 5 Sep 2022 → 8 Sep 2022
|Name||2022 IEEE 23rd Latin American Test Symposium, LATS 2022|
|Conference||23rd IEEE Latin American Test Symposium, LATS 2022|
|Period||5/09/22 → 8/09/22|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported by CONACYT (Mexico) under the postgraduate program No. 212460.
© 2022 IEEE.
- FinFET technology
- failure probability
- memory cell
- radiation-induced effects
- soft errors