Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

Victor Champac*, Hector Villacorta, R. Gomez-Fuentes, Fabian Vargas, Jaume Segura

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.

Original languageEnglish
Title of host publication2022 IEEE 23rd Latin American Test Symposium, LATS 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665457071
DOIs
StatePublished - 2022
Event23rd IEEE Latin American Test Symposium, LATS 2022 - Montevideo, Uruguay
Duration: 5 Sep 20228 Sep 2022

Publication series

Name2022 IEEE 23rd Latin American Test Symposium, LATS 2022

Conference

Conference23rd IEEE Latin American Test Symposium, LATS 2022
Country/TerritoryUruguay
CityMontevideo
Period5/09/228/09/22

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by CONACYT (Mexico) under the postgraduate program No. 212460.

Publisher Copyright:
© 2022 IEEE.

Keywords

  • FinFET technology
  • failure probability
  • memory cell
  • radiation-induced effects
  • soft errors

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