Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

Victor Champac; Hector Villacorta; R. Gomez-Fuentes; Fabian Vargas; Jaume Segura

doi:10.1109/LATS57337.2022.9936923

Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

Victor Champac^*, Hector Villacorta^*, R. Gomez-Fuentes, Fabian Vargas, Jaume Segura

^*Corresponding author for this work

Departamento de Investigación en Física

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.

Original language	English
Title of host publication	2022 IEEE 23rd Latin American Test Symposium, LATS 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665457071
DOIs	https://doi.org/10.1109/LATS57337.2022.9936923
State	Published - 2022
Event	23rd IEEE Latin American Test Symposium, LATS 2022 - Montevideo, Uruguay Duration: 5 Sep 2022 → 8 Sep 2022

Publication series

Name	2022 IEEE 23rd Latin American Test Symposium, LATS 2022

Conference

Conference	23rd IEEE Latin American Test Symposium, LATS 2022
Country/Territory	Uruguay
City	Montevideo
Period	5/09/22 → 8/09/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

FinFET technology
failure probability
memory cell
radiation-induced effects
soft errors

Access to Document

10.1109/LATS57337.2022.9936923

Cite this

Champac, V., Villacorta, H., Gomez-Fuentes, R., Vargas, F., & Segura, J. (2022). Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations. In 2022 IEEE 23rd Latin American Test Symposium, LATS 2022 (2022 IEEE 23rd Latin American Test Symposium, LATS 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LATS57337.2022.9936923

@inproceedings{51c2e25c2ffa43078dbfad4576882835,

title = "Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations",

abstract = "This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.",

keywords = "FinFET technology, failure probability, memory cell, radiation-induced effects, soft errors",

author = "Victor Champac and Hector Villacorta and R. Gomez-Fuentes and Fabian Vargas and Jaume Segura",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 23rd IEEE Latin American Test Symposium, LATS 2022 ; Conference date: 05-09-2022 Through 08-09-2022",

year = "2022",

doi = "10.1109/LATS57337.2022.9936923",

language = "Ingl{\'e}s",

series = "2022 IEEE 23rd Latin American Test Symposium, LATS 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE 23rd Latin American Test Symposium, LATS 2022",

address = "Estados Unidos",

}

Champac, V, Villacorta, H, Gomez-Fuentes, R, Vargas, F & Segura, J 2022, Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations. in 2022 IEEE 23rd Latin American Test Symposium, LATS 2022. 2022 IEEE 23rd Latin American Test Symposium, LATS 2022, Institute of Electrical and Electronics Engineers Inc., 23rd IEEE Latin American Test Symposium, LATS 2022, Montevideo, Uruguay, 5/09/22. https://doi.org/10.1109/LATS57337.2022.9936923

Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations. / Champac, Victor; Villacorta, Hector; Gomez-Fuentes, R. et al.
2022 IEEE 23rd Latin American Test Symposium, LATS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE 23rd Latin American Test Symposium, LATS 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

AU - Champac, Victor

AU - Villacorta, Hector

AU - Gomez-Fuentes, R.

AU - Vargas, Fabian

AU - Segura, Jaume

PY - 2022

Y1 - 2022

N2 - This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.

AB - This work studies radiation-induced effects in Fin-FET technology, the leading technology in advanced nodes for high-end embedded systems. Technology computer-aided design (TCAD) tools are used to evaluate soft-error robustness to radiation-induced effects of FinFET SRAM cells with the fin height (HFIN) and the number of fins (NFIN). HFIN and NFIN are two critical parameters in the development of newer technologies. The ion-strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. TCAD tools are used to quantify the amount of collected and critical charges of the memory cells used to evaluate the failure probability. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and guide the required HFIN and NFIN in the development of new FinFET technologies.

KW - FinFET technology

KW - failure probability

KW - memory cell

KW - radiation-induced effects

KW - soft errors

UR - http://www.scopus.com/inward/record.url?scp=85142806322&partnerID=8YFLogxK

U2 - 10.1109/LATS57337.2022.9936923

DO - 10.1109/LATS57337.2022.9936923

M3 - Contribución a la conferencia

AN - SCOPUS:85142806322

T3 - 2022 IEEE 23rd Latin American Test Symposium, LATS 2022

BT - 2022 IEEE 23rd Latin American Test Symposium, LATS 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 23rd IEEE Latin American Test Symposium, LATS 2022

Y2 - 5 September 2022 through 8 September 2022

ER -

Champac V, Villacorta H, Gomez-Fuentes R, Vargas F, Segura J. Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations. In 2022 IEEE 23rd Latin American Test Symposium, LATS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE 23rd Latin American Test Symposium, LATS 2022). doi: 10.1109/LATS57337.2022.9936923

Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

Abstract

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Keywords

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