Failure Probability due to Radiation-Induced Effects in FinFET SRAM Cells under Process Variations

Victor Champac*, Hector Villacorta, R. Gomez-Fuentes, Fabian Vargas, Jaume Segura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This work studies radiation-induced effects in FinFET technology, the leading technology in advanced nodes for high-end embedded systems. As the fin height (HFIN) and the number of fins (NFIN) are two critical parameters in the development of newer technologies, the soft-error robustness to radiation-induced effects in FinFET SRAM cells with HFIN and NFIN) is evaluated using Technology Computer-Aided Design (TCAD) tools. The ion strike direction and the process variations are considered. An analytical method to evaluate the failure probability of the memory cell due to radiation-induced effects under process variations is proposed. The amount of critical and collected charges of the memory cell are obtained with TCAD tools. The proposed method can be used to get insight into the robustness behavior of the memory cell with HFIN and NFIN and to guide the obtention of HFIN and NFIN parameters in developing new FinFET technologies.

Original languageEnglish
Pages (from-to)75-86
Number of pages12
JournalJournal of Electronic Testing: Theory and Applications (JETTA)
Volume40
Issue number1
DOIs
StatePublished - Feb 2024

Bibliographical note

Publisher Copyright:
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.

Keywords

  • Failure probability
  • FinFET technology
  • Memory cell
  • Radiation-induced effects
  • Soft errors

Fingerprint

Dive into the research topics of 'Failure Probability due to Radiation-Induced Effects in FinFET SRAM Cells under Process Variations'. Together they form a unique fingerprint.

Cite this