Original language | American English |
---|---|
Pages (from-to) | 505-510 |
Number of pages | 6 |
Journal | Organic Electronics: physics, materials, applications |
DOIs | |
State | Published - 1 Feb 2013 |
Externally published | Yes |
Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics
D. Mao, I. Mejia, A. L. Salas-Villasenor, M. Singh, H. Stiegler, B. E. Gnade, M. A. Quevedo-Lopez
Research output: Contribution to journal › Article › peer-review
11
Scopus
citations