Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics

D. Mao, I. Mejia, A. L. Salas-Villasenor, M. Singh, H. Stiegler, B. E. Gnade, M. A. Quevedo-Lopez

Research output: Contribution to journalArticle

11 Scopus citations
Original languageAmerican English
Pages (from-to)505-510
Number of pages6
JournalOrganic Electronics: physics, materials, applications
DOIs
StatePublished - 1 Feb 2013
Externally publishedYes

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