Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics

D. Mao, I. Mejia, A. L. Salas-Villasenor, M. Singh, H. Stiegler, B. E. Gnade, M. A. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	505-510
Number of pages	6
Journal	Organic Electronics: physics, materials, applications
DOIs	https://doi.org/10.1016/j.orgel.2012.10.035
State	Published - 1 Feb 2013
Externally published	Yes

Access to Document

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title = "Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics",

author = "D. Mao and I. Mejia and Salas-Villasenor, {A. L.} and M. Singh and H. Stiegler and Gnade, {B. E.} and Quevedo-Lopez, {M. A.}",

year = "2013",

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doi = "10.1016/j.orgel.2012.10.035",

language = "American English",

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T1 - Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics

AU - Mao, D.

AU - Mejia, I.

AU - Salas-Villasenor, A. L.

AU - Singh, M.

AU - Stiegler, H.

AU - Gnade, B. E.

AU - Quevedo-Lopez, M. A.

PY - 2013/2/1

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U2 - 10.1016/j.orgel.2012.10.035

DO - 10.1016/j.orgel.2012.10.035

M3 - Article

SP - 505

EP - 510

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

ER -