| Original language | American English |
|---|---|
| Journal | Semiconductor Science and Technology |
| DOIs | |
| State | Published - 5 Feb 2018 |
| Externally published | Yes |
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Thin film transistors
ITO (semiconductors)
transistors
insulators
thin films
Flow rate
Hall mobility
flow velocity
Dry etching
Atomic layer deposition
Reactive sputtering
Gate dielectrics
Photolithography
Threshold voltage
Crystal orientation
Carrier concentration
photolithography
atomic layer epitaxy
threshold voltage
low voltage
Cite this
Guzmán-Caballero, D. E., Quevedo-López, M. A., De La Cruz, W., & Ramírez-Bon, R. (2018). Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/aaa7a6
@article{e821b55791a54176a83f9f513ce84364,
title = "Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts",
author = "Guzm{\'a}n-Caballero, {D. E.} and Quevedo-L{\'o}pez, {M. A.} and {De La Cruz}, W. and R. Ram{\'i}rez-Bon",
year = "2018",
month = "2",
day = "5",
doi = "10.1088/1361-6641/aaa7a6",
language = "American English",
journal = "Semiconductor Science and Technology",
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Guzmán-Caballero, DE, Quevedo-López, MA, De La Cruz, W & Ramírez-Bon, R 2018, 'Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts', Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/aaa7a6
Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts. / Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De La Cruz, W.; Ramírez-Bon, R.
In: Semiconductor Science and Technology, 05.02.2018.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts
AU - Guzmán-Caballero, D. E.
AU - Quevedo-López, M. A.
AU - De La Cruz, W.
AU - Ramírez-Bon, R.
PY - 2018/2/5
Y1 - 2018/2/5
U2 - 10.1088/1361-6641/aaa7a6
DO - 10.1088/1361-6641/aaa7a6
M3 - Article
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
ER -
Guzmán-Caballero DE, Quevedo-López MA, De La Cruz W, Ramírez-Bon R. Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts. Semiconductor Science and Technology. 2018 Feb 5. https://doi.org/10.1088/1361-6641/aaa7a6