Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts

D. E. Guzmán-Caballero, M. A. Quevedo-López, W. De La Cruz, R. Ramírez-Bon

Research output: Contribution to journal › Article

Original language	American English
Journal	Semiconductor Science and Technology
DOIs	https://doi.org/10.1088/1361-6641/aaa7a6
State	Published - 5 Feb 2018
Externally published	Yes

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title = "Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts",

author = "Guzm{\'a}n-Caballero, {D. E.} and Quevedo-L{\'o}pez, {M. A.} and {De La Cruz}, W. and R. Ram{\'i}rez-Bon",

year = "2018",

month = feb,

day = "5",

doi = "10.1088/1361-6641/aaa7a6",

language = "American English",

journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

AU - Guzmán-Caballero, D. E.

AU - Quevedo-López, M. A.

AU - De La Cruz, W.

AU - Ramírez-Bon, R.

PY - 2018/2/5

Y1 - 2018/2/5

U2 - 10.1088/1361-6641/aaa7a6

DO - 10.1088/1361-6641/aaa7a6

M3 - Article

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -