Original language | American English |
---|---|
Journal | Semiconductor Science and Technology |
DOIs | |
State | Published - 5 Feb 2018 |
Externally published | Yes |
Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts
D. E. Guzmán-Caballero, M. A. Quevedo-López, W. De La Cruz, R. Ramírez-Bon
Research output: Contribution to journal › Article › peer-review
8
Scopus
citations