Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts

D. E. Guzmán-Caballero, M. A. Quevedo-López, W. De La Cruz, R. Ramírez-Bon

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageAmerican English
JournalSemiconductor Science and Technology
DOIs
StatePublished - 5 Feb 2018
Externally publishedYes

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Thin film transistors
ITO (semiconductors)
transistors
insulators
thin films
Flow rate
Hall mobility
flow velocity
Dry etching
Atomic layer deposition
Reactive sputtering
Gate dielectrics
Photolithography
Threshold voltage
Crystal orientation
Carrier concentration
photolithography
atomic layer epitaxy
threshold voltage
low voltage

Cite this

@article{e821b55791a54176a83f9f513ce84364,
title = "Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts",
author = "Guzm{\'a}n-Caballero, {D. E.} and Quevedo-L{\'o}pez, {M. A.} and {De La Cruz}, W. and R. Ram{\'i}rez-Bon",
year = "2018",
month = "2",
day = "5",
doi = "10.1088/1361-6641/aaa7a6",
language = "American English",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",

}

Fully patterned p-channel SnO TFTs using transparent Al<inf>2</inf>O<inf>3</inf> gate insulator and ITO as source and drain contacts. / Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De La Cruz, W.; Ramírez-Bon, R.

In: Semiconductor Science and Technology, 05.02.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

AU - Guzmán-Caballero, D. E.

AU - Quevedo-López, M. A.

AU - De La Cruz, W.

AU - Ramírez-Bon, R.

PY - 2018/2/5

Y1 - 2018/2/5

U2 - 10.1088/1361-6641/aaa7a6

DO - 10.1088/1361-6641/aaa7a6

M3 - Article

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -