TY - JOUR
T1 - Gallium nitride thin films by microwave plasma-assisted ALD
AU - Romo-García, F.
AU - Higuera-Valenzuela, H. J.
AU - Cabrera-German, D.
AU - Berman-Mendoza, D.
AU - Ramos-Carrazco, A.
AU - Contreras, O. E.
AU - García-Gutierrez, R.
N1 - Publisher Copyright:
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
PY - 2019/11/1
Y1 - 2019/11/1
N2 - Synthesis and characterization of gallium nitride (GaN) thin films via microwave plasma-assisted atomic layer deposition (MPALD) is reported in this research. The GaN thin films grown by this technique were amorphous or nanocrystalline as it was demonstrated by electron microscopy. The optical response of these GaN thin films showed a broad peak between 400 nm and 750 nm wavelengths due mostly to carbon and oxygen impurities as has been demonstrated by XPS. That emission from these GaN thin films is located at the border of white and yellow-green emission according to CIE 1931 chromaticity diagram with coordinates, x = 0.3491 and y = 0.4312.
AB - Synthesis and characterization of gallium nitride (GaN) thin films via microwave plasma-assisted atomic layer deposition (MPALD) is reported in this research. The GaN thin films grown by this technique were amorphous or nanocrystalline as it was demonstrated by electron microscopy. The optical response of these GaN thin films showed a broad peak between 400 nm and 750 nm wavelengths due mostly to carbon and oxygen impurities as has been demonstrated by XPS. That emission from these GaN thin films is located at the border of white and yellow-green emission according to CIE 1931 chromaticity diagram with coordinates, x = 0.3491 and y = 0.4312.
UR - http://www.scopus.com/inward/record.url?scp=85076577157&partnerID=8YFLogxK
U2 - 10.1364/OME.9.004187
DO - 10.1364/OME.9.004187
M3 - Artículo
AN - SCOPUS:85076577157
SN - 2159-3930
VL - 9
SP - 4187
EP - 4193
JO - Optical Materials Express
JF - Optical Materials Express
IS - 11
ER -