Gallium nitride thin films by microwave plasma-assisted ALD

F. Romo-García, H. J. Higuera-Valenzuela, D. Cabrera-German, D. Berman-Mendoza*, A. Ramos-Carrazco, O. E. Contreras, R. García-Gutierrez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Synthesis and characterization of gallium nitride (GaN) thin films via microwave plasma-assisted atomic layer deposition (MPALD) is reported in this research. The GaN thin films grown by this technique were amorphous or nanocrystalline as it was demonstrated by electron microscopy. The optical response of these GaN thin films showed a broad peak between 400 nm and 750 nm wavelengths due mostly to carbon and oxygen impurities as has been demonstrated by XPS. That emission from these GaN thin films is located at the border of white and yellow-green emission according to CIE 1931 chromaticity diagram with coordinates, x = 0.3491 and y = 0.4312.

Original languageEnglish
Pages (from-to)4187-4193
Number of pages7
JournalOptical Materials Express
Volume9
Issue number11
DOIs
StatePublished - 1 Nov 2019

Bibliographical note

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© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

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