@conference{528f5048169f41399cd22e691ab7af07,
title = "Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications",
author = "Wen, {H. C.} and Song, {S. C.} and Park, {C. S.} and C. Burham and G. Bersuker and K. Choi and Quevedo-Lopez, {M. A.} and Ju, {B. S.} and Alshareef, {H. N.} and H. Niimi and Park, {H. B.} and Lysaght, {P. S.} and P. Majhi and Lee, {B. H.} and R. Jamrny",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/VLSIT.2007.4339766",
language = "American English",
pages = "160--161",
note = "Digest of Technical Papers - Symposium on VLSI Technology ; Conference date: 01-12-2007",
}