Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen, S. C. Song, C. S. Park, C. Burham, G. Bersuker, K. Choi, M. A. Quevedo-Lopez, B. S. Ju, H. N. Alshareef, H. Niimi, H. B. Park, P. S. Lysaght, P. Majhi, B. H. Lee, R. Jamrny

Research output: Contribution to conferencePaper

24 Scopus citations
Original languageAmerican English
Pages160-161
Number of pages2
DOIs
StatePublished - 1 Dec 2007
Externally publishedYes
EventDigest of Technical Papers - Symposium on VLSI Technology -
Duration: 1 Dec 2007 → …

Conference

ConferenceDigest of Technical Papers - Symposium on VLSI Technology
Period1/12/07 → …

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