Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen; S. C. Song; C. S. Park; C. Burham; G. Bersuker; K. Choi; M. A. Quevedo-Lopez; B. S. Ju; H. N. Alshareef; H. Niimi; H. B. Park; P. S. Lysaght; P. Majhi; B. H. Lee; R. Jamrny

doi:10.1109/VLSIT.2007.4339766

Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen, S. C. Song, C. S. Park, C. Burham, G. Bersuker, K. Choi, M. A. Quevedo-Lopez, B. S. Ju, H. N. Alshareef, H. Niimi, H. B. Park, P. S. Lysaght, P. Majhi, B. H. Lee, R. Jamrny

Research output: Contribution to conference › Paper

24 Scopus citations

Original language	American English
Pages	160-161
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2007.4339766
State	Published - 1 Dec 2007
Externally published	Yes
Event	Digest of Technical Papers - Symposium on VLSI Technology - Duration: 1 Dec 2007 → …

Conference

Conference	Digest of Technical Papers - Symposium on VLSI Technology
Period	1/12/07 → …

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10.1109/VLSIT.2007.4339766

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Wen, H. C., Song, S. C., Park, C. S., Burham, C., Bersuker, G., Choi, K., Quevedo-Lopez, M. A., Ju, B. S., Alshareef, H. N., Niimi, H., Park, H. B., Lysaght, P. S., Majhi, P., Lee, B. H., & Jamrny, R. (2007). Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications. 160-161. Paper presented at Digest of Technical Papers - Symposium on VLSI Technology. https://doi.org/10.1109/VLSIT.2007.4339766

Wen, H. C. ; Song, S. C. ; Park, C. S. ; Burham, C. ; Bersuker, G. ; Choi, K. ; Quevedo-Lopez, M. A. ; Ju, B. S. ; Alshareef, H. N. ; Niimi, H. ; Park, H. B. ; Lysaght, P. S. ; Majhi, P. ; Lee, B. H. ; Jamrny, R. / Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications. Paper presented at Digest of Technical Papers - Symposium on VLSI Technology.2 p.

@conference{528f5048169f41399cd22e691ab7af07,

title = "Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications",

author = "Wen, {H. C.} and Song, {S. C.} and Park, {C. S.} and C. Burham and G. Bersuker and K. Choi and Quevedo-Lopez, {M. A.} and Ju, {B. S.} and Alshareef, {H. N.} and H. Niimi and Park, {H. B.} and Lysaght, {P. S.} and P. Majhi and Lee, {B. H.} and R. Jamrny",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/VLSIT.2007.4339766",

language = "American English",

pages = "160--161",

note = "Digest of Technical Papers - Symposium on VLSI Technology ; Conference date: 01-12-2007",

}

Wen, HC, Song, SC, Park, CS, Burham, C, Bersuker, G, Choi, K, Quevedo-Lopez, MA, Ju, BS, Alshareef, HN, Niimi, H, Park, HB, Lysaght, PS, Majhi, P, Lee, BH & Jamrny, R 2007, 'Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications', Paper presented at Digest of Technical Papers - Symposium on VLSI Technology, 1/12/07 pp. 160-161. https://doi.org/10.1109/VLSIT.2007.4339766

Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications. / Wen, H. C.; Song, S. C.; Park, C. S.; Burham, C.; Bersuker, G.; Choi, K.; Quevedo-Lopez, M. A.; Ju, B. S.; Alshareef, H. N.; Niimi, H.; Park, H. B.; Lysaght, P. S.; Majhi, P.; Lee, B. H.; Jamrny, R.

2007. 160-161 Paper presented at Digest of Technical Papers - Symposium on VLSI Technology.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

AU - Wen, H. C.

AU - Song, S. C.

AU - Park, C. S.

AU - Burham, C.

AU - Bersuker, G.

AU - Choi, K.

AU - Quevedo-Lopez, M. A.

AU - Ju, B. S.

AU - Alshareef, H. N.

AU - Niimi, H.

AU - Park, H. B.

AU - Lysaght, P. S.

AU - Majhi, P.

AU - Lee, B. H.

AU - Jamrny, R.

PY - 2007/12/1

Y1 - 2007/12/1

U2 - 10.1109/VLSIT.2007.4339766

DO - 10.1109/VLSIT.2007.4339766

M3 - Paper

SP - 160

EP - 161

T2 - Digest of Technical Papers - Symposium on VLSI Technology

Y2 - 1 December 2007

ER -

Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

Conference

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