Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H. Zhang, M. El-Bouanani, M. J. Kim, R. M. Wallace, B. E. Gnade

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.

Original languageEnglish
Pages (from-to)68-71
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - 3 Feb 2003
Externally publishedYes

Bibliographical note

Funding Information:
We would like to thank Lancy Tsung of Texas Instruments for HRTEM analysis of the sputter deposited films. The work is supported by US Army Soldier Systems Center (under contract DAAD16-00-C-9273)


  • Dielectrics
  • Hafnium
  • Oxidation
  • X-ray photoelectron spectroscopy (XPS)


Dive into the research topics of 'Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide'. Together they form a unique fingerprint.

Cite this