Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

P. Punchaipetch; G. Pant; M. Quevedo-Lopez; H. Zhang; M. El-Bouanani; M. J. Kim; R. M. Wallace; B. E. Gnade

doi:10.1016/S0040-6090(02)01306-8

Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H. Zhang, M. El-Bouanani, M. J. Kim, R. M. Wallace, B. E. Gnade

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O₂ ambient. Hafnium silicate films are obtained with no detectable SiO_x interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.

Original language	English
Pages (from-to)	68-71
Number of pages	4
Journal	Thin Solid Films
Volume	425
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01306-8
State	Published - 3 Feb 2003
Externally published	Yes

Bibliographical note

Funding Information:
We would like to thank Lancy Tsung of Texas Instruments for HRTEM analysis of the sputter deposited films. The work is supported by US Army Soldier Systems Center (under contract DAAD16-00-C-9273)

Keywords

Dielectrics
Hafnium
Oxidation
X-ray photoelectron spectroscopy (XPS)

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10.1016/S0040-6090(02)01306-8

Cite this

@article{2a087cc852184bada6b588c92dcae054,

title = "Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide",

abstract = "We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.",

keywords = "Dielectrics, Hafnium, Oxidation, X-ray photoelectron spectroscopy (XPS)",

author = "P. Punchaipetch and G. Pant and M. Quevedo-Lopez and H. Zhang and M. El-Bouanani and Kim, {M. J.} and Wallace, {R. M.} and Gnade, {B. E.}",

note = "Funding Information: We would like to thank Lancy Tsung of Texas Instruments for HRTEM analysis of the sputter deposited films. The work is supported by US Army Soldier Systems Center (under contract DAAD16-00-C-9273) ",

year = "2003",

month = feb,

day = "3",

doi = "10.1016/S0040-6090(02)01306-8",

language = "Ingl{\'e}s",

volume = "425",

pages = "68--71",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

AU - Punchaipetch, P.

AU - Pant, G.

AU - Quevedo-Lopez, M.

AU - Zhang, H.

AU - El-Bouanani, M.

AU - Kim, M. J.

AU - Wallace, R. M.

AU - Gnade, B. E.

N1 - Funding Information: We would like to thank Lancy Tsung of Texas Instruments for HRTEM analysis of the sputter deposited films. The work is supported by US Army Soldier Systems Center (under contract DAAD16-00-C-9273)

PY - 2003/2/3

Y1 - 2003/2/3

N2 - We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.

AB - We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.

KW - Dielectrics

KW - Hafnium

KW - Oxidation

KW - X-ray photoelectron spectroscopy (XPS)

UR - http://www.scopus.com/inward/record.url?scp=0037415866&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)01306-8

DO - 10.1016/S0040-6090(02)01306-8

M3 - Artículo

SN - 0040-6090

VL - 425

SP - 68

EP - 71

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

Abstract

Bibliographical note

Keywords

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