We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.
Bibliographical noteFunding Information:
We would like to thank Lancy Tsung of Texas Instruments for HRTEM analysis of the sputter deposited films. The work is supported by US Army Soldier Systems Center (under contract DAAD16-00-C-9273)
- X-ray photoelectron spectroscopy (XPS)