High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

P. D. Kirsch; J. Peterson; J. Gutt; S. Gopalan; S. Krishnan; H. J. Li; M. Quevedo-Lopez; M. Akbar; J. Barnett; N. Moumen; J. H. Sim; S. C. Song; P. Lysaght; C. Huffman; P. Majhi; M. Gardner; G. Brown; G. Bersuker; B. H. Lee

High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

P. D. Kirsch, J. Peterson, J. Gutt, S. Gopalan, S. Krishnan, H. J. Li, M. Quevedo-Lopez, M. Akbar, J. Barnett, N. Moumen, J. H. Sim, S. C. Song, P. Lysaght, C. Huffman, P. Majhi, M. Gardner, G. Brown, G. Bersuker, B. H. Lee

Research output: Contribution to conference › Paper

Original language	American English
Pages	84-93
Number of pages	10
State	Published - 1 Dec 2005
Externally published	Yes
Event	Proceedings - Electrochemical Society - Duration: 1 Dec 2005 → …

Conference

Conference	Proceedings - Electrochemical Society
Period	1/12/05 → …

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Kirsch, P. D., Peterson, J., Gutt, J., Gopalan, S., Krishnan, S., Li, H. J., Quevedo-Lopez, M., Akbar, M., Barnett, J., Moumen, N., Sim, J. H., Song, S. C., Lysaght, P., Huffman, C., Majhi, P., Gardner, M., Brown, G., Bersuker, G., & Lee, B. H. (2005). High-k dielectric process development for enhanced electron mobility in high performance field effect transistors. 84-93. Paper presented at Proceedings - Electrochemical Society, . https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33645668684&origin=inward

Kirsch, P. D. ; Peterson, J. ; Gutt, J. ; Gopalan, S. ; Krishnan, S. ; Li, H. J. ; Quevedo-Lopez, M. ; Akbar, M. ; Barnett, J. ; Moumen, N. ; Sim, J. H. ; Song, S. C. ; Lysaght, P. ; Huffman, C. ; Majhi, P. ; Gardner, M. ; Brown, G. ; Bersuker, G. ; Lee, B. H. / High-k dielectric process development for enhanced electron mobility in high performance field effect transistors. Paper presented at Proceedings - Electrochemical Society, .10 p.

@conference{632f119ad48745b6843a91008238d06c,

title = "High-k dielectric process development for enhanced electron mobility in high performance field effect transistors",

author = "Kirsch, {P. D.} and J. Peterson and J. Gutt and S. Gopalan and S. Krishnan and Li, {H. J.} and M. Quevedo-Lopez and M. Akbar and J. Barnett and N. Moumen and Sim, {J. H.} and Song, {S. C.} and P. Lysaght and C. Huffman and P. Majhi and M. Gardner and G. Brown and G. Bersuker and Lee, {B. H.}",

year = "2005",

month = dec,

day = "1",

language = "American English",

pages = "84--93",

note = "Proceedings - Electrochemical Society ; Conference date: 01-12-2005",

}

Kirsch, PD, Peterson, J, Gutt, J, Gopalan, S, Krishnan, S, Li, HJ, Quevedo-Lopez, M, Akbar, M, Barnett, J, Moumen, N, Sim, JH, Song, SC, Lysaght, P, Huffman, C, Majhi, P, Gardner, M, Brown, G, Bersuker, G & Lee, BH 2005, 'High-k dielectric process development for enhanced electron mobility in high performance field effect transistors', Paper presented at Proceedings - Electrochemical Society, 1/12/05 pp. 84-93. <https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33645668684&origin=inward>

High-k dielectric process development for enhanced electron mobility in high performance field effect transistors. / Kirsch, P. D.; Peterson, J.; Gutt, J.; Gopalan, S.; Krishnan, S.; Li, H. J.; Quevedo-Lopez, M.; Akbar, M.; Barnett, J.; Moumen, N.; Sim, J. H.; Song, S. C.; Lysaght, P.; Huffman, C.; Majhi, P.; Gardner, M.; Brown, G.; Bersuker, G.; Lee, B. H.

2005. 84-93 Paper presented at Proceedings - Electrochemical Society, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

AU - Kirsch, P. D.

AU - Peterson, J.

AU - Gutt, J.

AU - Gopalan, S.

AU - Krishnan, S.

AU - Li, H. J.

AU - Quevedo-Lopez, M.

AU - Akbar, M.

AU - Barnett, J.

AU - Moumen, N.

AU - Sim, J. H.

AU - Song, S. C.

AU - Lysaght, P.

AU - Huffman, C.

AU - Majhi, P.

AU - Gardner, M.

AU - Brown, G.

AU - Bersuker, G.

AU - Lee, B. H.

PY - 2005/12/1

Y1 - 2005/12/1

M3 - Paper

SP - 84

EP - 93

T2 - Proceedings - Electrochemical Society

Y2 - 1 December 2005

ER -