High performance gate first HfSiON dielectric satisfying 45nm node requirements

M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. H. Sim, C. Huffman, J. J. Peterson, B. H. Lee, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, D. Guo, H. Bu, T. P. Ma

Research output: Contribution to conferencePaper

10 Scopus citations
Original languageAmerican English
Pages425-428
Number of pages4
StatePublished - 1 Dec 2005
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting, IEDM -
Duration: 1 Dec 2005 → …

Conference

ConferenceTechnical Digest - International Electron Devices Meeting, IEDM
Period1/12/05 → …

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    Quevedo-Lopez, M. A., Krishnan, S. A., Kirsch, P. D., Li, H. J., Sim, J. H., Huffman, C., Peterson, J. J., Lee, B. H., Pant, G., Gnade, B. E., Kim, M. J., Wallace, R. M., Guo, D., Bu, H., & Ma, T. P. (2005). High performance gate first HfSiON dielectric satisfying 45nm node requirements. 425-428. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, . https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847711402&origin=inward