High performing pMOSFETs on Si(110) for application to hybrid orientation technologies - Comparison of HfO2 and HfSiON

Siddarth A. Krishnan, H. Rusty Harris, Paul D. Kirsch, Cristiano Krug, Manuel Quevedo-Lopez, Chadwin Young, Byoung Hun Lee, Rino Choi, Naser Chowdhury, Sagar Suthram, Scott Thompson, Gennadi Bersuker, Rajarao Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized Atomic Layer Deposited (ALD) HfO2 on Si(100) substrates with a ∼ 3.3× high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is -831 μA/um at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO2 has reduced coulomb and surface roughness scattering vs. HfSiON.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 10 Dec 200613 Dec 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
Country/TerritoryUnited States
CitySan Francisco, CA
Period10/12/0613/12/06

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