Higher permittivity rare earth-doped HfO<inf>2</inf> and ZrO<inf>2</inf> dielectrics for logic and memory applications

S. Govindarajan, T. S. Böscke, P. D. Kirsch, M. A. Quevedo-Lopez, P. Sivasubramani, S. C. Song, R. W. Wallace, B. E. Gnade, P. Y. Hung, Jimmy Price, U. Schröder, S. Ramanathan, B. H. Lee, R. Jammy

Research output: Contribution to conferencePaper

2 Scopus citations
Original languageAmerican English
DOIs
StatePublished - 27 Sep 2007
EventInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings -
Duration: 27 Sep 2007 → …

Conference

ConferenceInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Period27/09/07 → …

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    Govindarajan, S., Böscke, T. S., Kirsch, P. D., Quevedo-Lopez, M. A., Sivasubramani, P., Song, S. C., Wallace, R. W., Gnade, B. E., Hung, P. Y., Price, J., Schröder, U., Ramanathan, S., Lee, B. H., & Jammy, R. (2007). Higher permittivity rare earth-doped HfO<inf>2</inf> and ZrO<inf>2</inf> dielectrics for logic and memory applications. Paper presented at International Symposium on VLSI Technology, Systems, and Applications, Proceedings, . https://doi.org/10.1109/VTSA.2007.378912