Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

Rodolfo A. Rodriguez-Davila, Israel Mejia, Manuel Quevedo-Lopez, Chadwin D. Young

Research output: Contribution to conferencePaper

4 Scopus citations
Original languageAmerican English
DOIs
StatePublished - 30 Aug 2018
Externally publishedYes
EventProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA -
Duration: 30 Aug 2018 → …

Conference

ConferenceProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Period30/08/18 → …

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    Rodriguez-Davila, R. A., Mejia, I., Quevedo-Lopez, M., & Young, C. D. (2018). Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, . https://doi.org/10.1109/IPFA.2018.8452171