| Original language | American English |
|---|---|
| DOIs | |
| State | Published - 30 Aug 2018 |
| Externally published | Yes |
| Event | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Duration: 30 Aug 2018 → … |
Conference
| Conference | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
|---|---|
| Period | 30/08/18 → … |
Fingerprint
zinc oxides
transistors
degradation
transconductance
thin films
threshold voltage
shift
defects
electric potential
gases
Cite this
Rodriguez-Davila, R. A., Mejia, I., Quevedo-Lopez, M., & Young, C. D. (2018). Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, . https://doi.org/10.1109/IPFA.2018.8452171
@conference{90d028532d2742b8aec98a80a3e1bc04,
title = "Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric",
author = "Rodriguez-Davila, {Rodolfo A.} and Israel Mejia and Manuel Quevedo-Lopez and Young, {Chadwin D.}",
year = "2018",
month = "8",
day = "30",
doi = "10.1109/IPFA.2018.8452171",
language = "American English",
note = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 30-08-2018",
}
Rodriguez-Davila, RA, Mejia, I, Quevedo-Lopez, M & Young, CD 2018, 'Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric', Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 30/08/18. https://doi.org/10.1109/IPFA.2018.8452171
Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. / Rodriguez-Davila, Rodolfo A.; Mejia, Israel; Quevedo-Lopez, Manuel; Young, Chadwin D.
2018. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, .Research output: Contribution to conference › Paper
TY - CONF
T1 - Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric
AU - Rodriguez-Davila, Rodolfo A.
AU - Mejia, Israel
AU - Quevedo-Lopez, Manuel
AU - Young, Chadwin D.
PY - 2018/8/30
Y1 - 2018/8/30
U2 - 10.1109/IPFA.2018.8452171
DO - 10.1109/IPFA.2018.8452171
M3 - Paper
ER -
Rodriguez-Davila RA, Mejia I, Quevedo-Lopez M, Young CD. Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. 2018. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, . https://doi.org/10.1109/IPFA.2018.8452171