Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

Rodolfo A. Rodriguez-Davila, Israel Mejia, Manuel Quevedo-Lopez, Chadwin D. Young

Research output: Contribution to conferencePaperResearch

3 Citations (Scopus)
Original languageAmerican English
DOIs
StatePublished - 30 Aug 2018
Externally publishedYes
EventProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA -
Duration: 30 Aug 2018 → …

Conference

ConferenceProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Period30/08/18 → …

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zinc oxides
transistors
degradation
transconductance
thin films
threshold voltage
shift
defects
electric potential
gases

Cite this

Rodriguez-Davila, R. A., Mejia, I., Quevedo-Lopez, M., & Young, C. D. (2018). Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, . https://doi.org/10.1109/IPFA.2018.8452171
Rodriguez-Davila, Rodolfo A. ; Mejia, Israel ; Quevedo-Lopez, Manuel ; Young, Chadwin D. / Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, .
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Rodriguez-Davila, RA, Mejia, I, Quevedo-Lopez, M & Young, CD 2018, 'Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric' Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 30/08/18, . https://doi.org/10.1109/IPFA.2018.8452171

Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. / Rodriguez-Davila, Rodolfo A.; Mejia, Israel; Quevedo-Lopez, Manuel; Young, Chadwin D.

2018. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

AU - Rodriguez-Davila, Rodolfo A.

AU - Mejia, Israel

AU - Quevedo-Lopez, Manuel

AU - Young, Chadwin D.

PY - 2018/8/30

Y1 - 2018/8/30

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DO - 10.1109/IPFA.2018.8452171

M3 - Paper

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Rodriguez-Davila RA, Mejia I, Quevedo-Lopez M, Young CD. Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric. 2018. Paper presented at Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, . https://doi.org/10.1109/IPFA.2018.8452171