Abstract
Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance (gm) degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between gm degradation (i.e., interface degradation) and Δ Vt demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.
Original language | English |
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Title of host publication | IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781538649299 |
DOIs | |
State | Published - 30 Aug 2018 |
Externally published | Yes |
Event | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore Duration: 16 Jul 2018 → 19 Jul 2018 |
Publication series
Name | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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Volume | 2018-July |
Conference
Conference | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 |
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Country/Territory | Singapore |
City | Singapore |
Period | 16/07/18 → 19/07/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- Al2O3
- hot carrier stress
- reliablity
- thin film transistors
- zinc oxide