Hot carrier stress investigation of zinc oxide thin film transistors with an al2o3 gate dielectric

Rodolfo A. Rodriguez-Davila, Israel Mejia, Manuel Quevedo-Lopez, Chadwin D. Young

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance (gm) degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between gm degradation (i.e., interface degradation) and Δ Vt demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.

Original languageEnglish
Title of host publicationIPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538649299
DOIs
StatePublished - 30 Aug 2018
Externally publishedYes
Event25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore
Duration: 16 Jul 201819 Jul 2018

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2018-July

Conference

Conference25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
Country/TerritorySingapore
CitySingapore
Period16/07/1819/07/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • Al2O3
  • hot carrier stress
  • reliablity
  • thin film transistors
  • zinc oxide

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