Impact of nitrogen on PBTI characteristics of HfSiON/TiN gate stacks

Siddarth A. Krishnan, Manuel Quevedo-Lopez, Hong Jyh Li, Paul Kirsch, Rino Choi, Chadwin Young, Jeff J. Peterson, Byoung Hun Lee, Gennadi Bersuker, Jack C. Lee

Research output: Contribution to conferencePaper

8 Scopus citations

Abstract

The impact of nitrogen on charge trapping induced positive bias temperature instability (PBTI) characteristics in HfSiON/TiN gate stacks is investigated. While thickness is found to be the primary parameter to reduce charge trapping, plasma nitrogen reduces PBTI effects in thick (2.7 nm) HfSiON films. Thin films (1.8 nm) show significantly lower threshold voltage (VTH) shift than thick films and seem to be insensitive to N content. Thermal nitridation exacerbates the PBTI effects more than plasma nitridation. © 2006 IEEE.
Original languageAmerican English
Pages325-328
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Externally publishedYes
EventIEEE International Reliability Physics Symposium Proceedings -
Duration: 1 Dec 2006 → …

Conference

ConferenceIEEE International Reliability Physics Symposium Proceedings
Period1/12/06 → …

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