Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

A. L. Salas-Villasenor, I. Mejia, M. Sotelo-Lerma, Z. B. Guo, H. N. Alshareef, M. A. Quevedo-Lopez

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)
Original languageAmerican English
JournalSemiconductor Science and Technology
DOIs
StatePublished - 1 Aug 2014

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Cadmium sulfide
cadmium sulfides
Thin film transistors
Hydrogen
transistors
Carrier mobility
Heat treatment
Annealing
carrier mobility
annealing
hydrogen
thin films
Ions
Photolithography
photolithography
Fourier transform infrared spectroscopy
baths
ions
infrared spectroscopy
Oxygen

Cite this

Salas-Villasenor, A. L. ; Mejia, I. ; Sotelo-Lerma, M. ; Guo, Z. B. ; Alshareef, H. N. ; Quevedo-Lopez, M. A. / Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments. In: Semiconductor Science and Technology. 2014.
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year = "2014",
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Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments. / Salas-Villasenor, A. L.; Mejia, I.; Sotelo-Lerma, M.; Guo, Z. B.; Alshareef, H. N.; Quevedo-Lopez, M. A.

In: Semiconductor Science and Technology, 01.08.2014.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

AU - Salas-Villasenor, A. L.

AU - Mejia, I.

AU - Sotelo-Lerma, M.

AU - Guo, Z. B.

AU - Alshareef, H. N.

AU - Quevedo-Lopez, M. A.

PY - 2014/8/1

Y1 - 2014/8/1

U2 - 10.1088/0268-1242/29/8/085001

DO - 10.1088/0268-1242/29/8/085001

M3 - Article

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -