In Situ Growth of In2S3 Nanorods in Poly(3-Hexylthiophene) Hybrid Films

M. Cota-Leal, M. Sotelo-Lerma*, I. Corona-Corona, M. A. Quevedo-Lopez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A novel and efficient gas–liquid method for the in situ synthesis of In2S3 nanorods in a poly(3-hexylthiophene) (P3HT) matrix is demonstrated. The method involves a self-contained reaction between Na2S and HCl that produces H2S, which reacts with a P3HT/InCl3 solution resulting in hybrid P3HT/In2S3 films. The Na2S solution is regenerated for further use. The method yielded results in In2S3 nanoparticles and nanorods in a P3HT matrix, as observed by transmission electron microscopy. The In2S3 nanorods are 3 nm wide and ~30 nm long. The size of the nanorods is dependent on the P3HT concentration. The band gap (Eg) of the resulting In2S3/P3HT is in the range of 2.97–3.71 eV, as measured by UV–visible spectroscopy (UV–Vis) Charge transfer in the In2S3/P3HT was demonstrated by the presence of quenching in the fluorescence spectra of the composite. Chemical composition was investigated by energy dispersive x-ray spectroscopy analysis, as well as x-ray photoelectron spectroscopy. Both techniques demonstrated the formation of In2S3.

Original languageEnglish
Pages (from-to)2266-2273
Number of pages8
JournalJournal of Electronic Materials
Volume45
Issue number4
DOIs
StatePublished - 1 Apr 2016

Bibliographical note

Publisher Copyright:
© 2015, The Minerals, Metals & Materials Society.

Keywords

  • Semiconductor
  • composite
  • gas–liquid reaction
  • hybrid film
  • nanorods

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