In-situ low-temperature synthesis of PS-ZrO2 hybrid films and their characterization for high-k gate dielectric application

Diana Sánchez-Ahumada, Libia Judith Verastica-Ward, Martín Orozco, Diana Vargas-Hernández, Andrés Castro-Beltrán, Rafael Ramirez-Bon, Clemente Guadalupe Alvarado-Beltrán*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We report a novel high-k hybrid material synthesized at low temperature using a simple sol-gel derived method compatible with organic large-area application. The homogeneous cross-linked organic-inorganic dielectric film is achieved by solution process and densified at 100 °C. For the synthesis, styrene and zirconium isopropoxide are used as polystyrene and ZrO2 source, respectively. Also, the 3-trimetoxy-silyl-propyl-methacrylate was used as a coupling agent to link organic and inorganic phases. The hybrid films were deposited by dip coating and densified in-situ by polymerization and polycondensation of the organic and inorganic components. The hybrid materials were analyzed by FTIR, XPS, and TGA measurements to confirm the formation of the cross-linked hybrid material. Optical T and R spectroscopy, AFM, and SEM images demonstrated their optical properties, smooth surface, thickness, and high-quality films. The dielectric constant of 9.2 and leakage current around 10−7 A/cm2 was determined by analyzing the MIM capacitors electrical response, fabricated with the hybrid films as the insulator layer.

Original languageEnglish
Article number106188
JournalProgress in Organic Coatings
Volume154
DOIs
StatePublished - May 2021

Bibliographical note

Publisher Copyright:
© 2021

Keywords

  • High-k dielectrics
  • Hybrid films
  • MIM capacitor device
  • PS-ZrO
  • Sol-gel

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