In situ synthesis of Si3N4 from Na2SiF6 as a silicon solid precursor

A. L. Leal-Cruz, M. I. Pech-Canul*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The aim of this investigation was to synthesize Si3N4 through the reaction of nitrogen with SiF4(g) produced during the thermal decomposition of sodium hexafluorosilicate (Na2SiF6) and based on an experiment design, optimize the processing conditions. The quantitative effect and the contribution of the processing parameters on the amount of Si3N4 formed was determined using analysis of variance (ANOVA). Results show that particles, whiskers/fibers and coatings of α and β-Si3N4 can be produced in the same reaction chamber where the silicon precursor (SiF4) is generated. The optimum conditions for maximum amount of Si3N4 formed are: 60 min, 1300 °C, N2-NH3, 17 mbar, a preform of 85 SiC:15 Si (wt.%) with 50% porosity, and a compact of Na2SiF6 of 25 g. The versatility for synthesizing Si3N4 with a variety of morphologies through an in situ process suggests the potential of the proposed route for the economic production of Si3N4.

Original languageEnglish
Pages (from-to)27-33
Number of pages7
JournalMaterials Chemistry and Physics
Volume98
Issue number1
DOIs
StatePublished - 1 Jul 2006
Externally publishedYes

Bibliographical note

Funding Information:
Authors gratefully acknowledge CONACyT for financial support under contract 34826-U. A.L. Leal-Cruz expresses her gratitude to CONACyT for granting a scholarship. Finally, the authors also thank Mr. Felipe Márquez Torres for his technical assistance in the microscopic analysis and the company Microabrasivos de México for supplying the SiC powders.

Keywords

  • Chemical vapor deposition (CVD)
  • Coatings
  • Nitrides

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