Abstract
The aim of this investigation was to synthesize Si3N4 through the reaction of nitrogen with SiF4(g) produced during the thermal decomposition of sodium hexafluorosilicate (Na2SiF6) and based on an experiment design, optimize the processing conditions. The quantitative effect and the contribution of the processing parameters on the amount of Si3N4 formed was determined using analysis of variance (ANOVA). Results show that particles, whiskers/fibers and coatings of α and β-Si3N4 can be produced in the same reaction chamber where the silicon precursor (SiF4) is generated. The optimum conditions for maximum amount of Si3N4 formed are: 60 min, 1300 °C, N2-NH3, 17 mbar, a preform of 85 SiC:15 Si (wt.%) with 50% porosity, and a compact of Na2SiF6 of 25 g. The versatility for synthesizing Si3N4 with a variety of morphologies through an in situ process suggests the potential of the proposed route for the economic production of Si3N4.
Original language | English |
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Pages (from-to) | 27-33 |
Number of pages | 7 |
Journal | Materials Chemistry and Physics |
Volume | 98 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jul 2006 |
Externally published | Yes |
Bibliographical note
Funding Information:Authors gratefully acknowledge CONACyT for financial support under contract 34826-U. A.L. Leal-Cruz expresses her gratitude to CONACyT for granting a scholarship. Finally, the authors also thank Mr. Felipe Márquez Torres for his technical assistance in the microscopic analysis and the company Microabrasivos de México for supplying the SiC powders.
Keywords
- Chemical vapor deposition (CVD)
- Coatings
- Nitrides