Ink-jet printed CdS thin film transistors fabricated in-situ by micro-reaction

J. C. Ramos, D. Kabir, J. I. Mejia, C. A. Martinez, M. A. Quevedo-Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we report a simple, mask-free, very low material wastage method to deposit nanocrystalline CdS thin films as semiconducting layer for thin film transistors (TFTs). This method combines on-chip synthesis and ink-jet printing techniques. The physicochemical and morphological properties of the films were studied in function of jetting parameters including printed volume and substrate temperature. The fabricated TFTs have n-type conduction with resistivities in the order ~1×105 Ω·cm, on/off ratios of ~103, VT of ~3.4 V and mobility (μSAT) of ~0.1 cm2/V·s. This approach demonstrates a new and efficient solution-process route for manufacturing semiconductor CdS thin films with performance comparable or better than several organic n-type semiconductors.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages265-268
Number of pages4
StatePublished - 2013
Externally publishedYes
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: 12 May 201316 May 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Conference

ConferenceNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Country/TerritoryUnited States
CityWashington, DC
Period12/05/1316/05/13

Keywords

  • Cadmium sulfide
  • Inkjet printing
  • Inorganic semiconductors
  • On-chip synthesis
  • Solution processes
  • Thin film transistors

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