Inkjet printed thin film transistors using cadmium sulfide as active layer prepared by in-situ micro-reaction

J. C. Ramos, D. L. Kabir, I. Mejia, M. Mireles, C. A. Martine, M. A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We demonstrate an additive ink-jet process to fabricate homogeneous CdS semiconductor films for thin film transistors (TFTs). This process combines in-situ synthesis with ink-jet printing at a maximum processing temperature of 250°C. The solvent in the reaction is used to dissolve the cadmium and sulfur precursors. The reaction to form the CdS films takes place in a solid-state mode. This method does not require preliminary nanoparticles synthesis or organic stabilizers and results in film with near zero precursor waste. TFTs with mobilities of 7.5 × 10-2 cm2/V • s, threshold voltage (VT) of 3.4 V and on/off current ratio of 8 × 104 were demonstrated. © 2013 The Electrochemical Society.
Original languageAmerican English
JournalECS Solid State Letters
DOIs
StatePublished - 26 Jul 2013
Externally publishedYes

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