The growth of InxGa1-xN films (x = 0·1 and x = 0·2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 °C is reported. As a novelty, the use of a Ga-In metallic alloy to improve the indium incorporation in the InxGa1-xN is proposed. The results of high quality InxGa1-xN films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the InxGa1-xN and GaN films is shown as a function of the indium incorporation. The highest crystalline InxGa1-xN films structure was obtained with an indium composition of x = 0·20. Also, the preferential growth on the (002) plane over In0·2Ga0·8N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the InxGa1-xN films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 °C. The TL intensity was found to depend on composition being higher for x = 0·1 and increases as radiation dose increases.
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- Chemical vapour deposition
- Indium-gallium nitride
- Nitride of group-III