InxGa1-xN fibres grown on Au/SiO2 by chemical vapour deposition

A. Ramos-Carrazco*, R. García, M. Barboza-Flores, R. Rangel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The growth of InxGa1-xN films (x = 0·1 and x = 0·2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 °C is reported. As a novelty, the use of a Ga-In metallic alloy to improve the indium incorporation in the InxGa1-xN is proposed. The results of high quality InxGa1-xN films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the InxGa1-xN and GaN films is shown as a function of the indium incorporation. The highest crystalline InxGa1-xN films structure was obtained with an indium composition of x = 0·20. Also, the preferential growth on the (002) plane over In0·2Ga0·8N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the InxGa1-xN films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 °C. The TL intensity was found to depend on composition being higher for x = 0·1 and increases as radiation dose increases.

Original languageEnglish
Pages (from-to)1597-1602
Number of pages6
JournalBulletin of Materials Science
Volume37
Issue number7
DOIs
StatePublished - 1 Dec 2014

Bibliographical note

Publisher Copyright:
© Indian Academy of Sciences.

Keywords

  • Chemical vapour deposition
  • Indium-gallium nitride
  • Nitride of group-III

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