Abstract
The interaction between Cd and Te in InAs crystals grown using the Bridgeman method has been studied. It is shown that at the crystallization temperature of InAs and with total donor and acceptor concentration of less than 1019 cm-3, there is no interaction between the impurities either in the liquid or solid phases. When the ingot is cooled down to low temperatures, some of the Cd and Te are bonded into electrically neutral donor-acceptor pairs.
Original language | English |
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Pages (from-to) | 1609-1612 |
Number of pages | 4 |
Journal | Soviet Physics Journal |
Volume | 21 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1978 |
Externally published | Yes |