Abstract
The kinetics of formation of donor-acceptor pairs in compensated InAs containing 9. 9 multiplied by (times) 10**1**9 cm** minus **3 Te and 8. 8 multiplied by (times) 10**1**9 cm** minus **3 Cd was studied by recording changes in the electrical conductivity sigma during isochronous and isothermal annealing. The conductivity sigma and the Hall coefficient were measured in the temperature range 300-1150 degree K using a special crystal holder preventing oxidation and decomposition of InAs. The relaxation time of donor-acceptor pairs deduced from the experimental results was 3. 2 multiplied by (times) 10**4-7. 1 multiplied by (times) 10**2 sec in the temperature range 713-863 degree K, and it was seven orders of magnitude higher than the values calculated from the theory of Reiss using coefficients of diffusion of Cd and Te in InAs. The disagreement was due to the fact that the diffusion of Cd and Te in InAs was clearly of dissociative nature.
| Original language | English |
|---|---|
| Pages (from-to) | 1025-1027 |
| Number of pages | 3 |
| Journal | Soviet physics. Semiconductors |
| Volume | 15 |
| Issue number | 9 |
| State | Published - 1981 |