Abstract
CeRAM devices were fabricated and electrically characterized following x-ray irradiation exposure for the purpose of investigating device reliability and operation in harsh environments. CeRAM were subjected to a total ionizing dose (TID) of up to 1 Mrad, which was found to induce resistance switching (RS) of the memory state. TID was determined to have no impact on RS parameters, including both switching voltages and resistance levels.
Original language | English |
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Title of host publication | 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9798350327274 |
DOIs | |
State | Published - 2023 |
Event | 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 - South Lake Tahoe, United States Duration: 8 Oct 2023 → 12 Oct 2023 |
Publication series
Name | IEEE International Integrated Reliability Workshop Final Report |
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ISSN (Print) | 1930-8841 |
ISSN (Electronic) | 2374-8036 |
Conference
Conference | 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 |
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Country/Territory | United States |
City | South Lake Tahoe |
Period | 8/10/23 → 12/10/23 |
Bibliographical note
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