Investigation of X-ray Irradiation Impact on CeRAM

A. A. Gruszecki*, L. Fernandez-Izquierdo, S. V. Suryavanshi, G. Yeric, M. Quevedo-Lopez, C. D. Young

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

CeRAM devices were fabricated and electrically characterized following x-ray irradiation exposure for the purpose of investigating device reliability and operation in harsh environments. CeRAM were subjected to a total ionizing dose (TID) of up to 1 Mrad, which was found to induce resistance switching (RS) of the memory state. TID was determined to have no impact on RS parameters, including both switching voltages and resistance levels.

Original languageEnglish
Title of host publication2023 IEEE International Integrated Reliability Workshop, IIRW 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350327274
DOIs
StatePublished - 2023
Event2023 IEEE International Integrated Reliability Workshop, IIRW 2023 - South Lake Tahoe, United States
Duration: 8 Oct 202312 Oct 2023

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
ISSN (Print)1930-8841
ISSN (Electronic)2374-8036

Conference

Conference2023 IEEE International Integrated Reliability Workshop, IIRW 2023
Country/TerritoryUnited States
CitySouth Lake Tahoe
Period8/10/2312/10/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

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