An anomalous concentration dependence of the microhardness in (InAs)//1// minus //x(CdTe)//x solid solutions near the pure components is noted which is attributed to a change in the degree of dissociation of the components. A method of determining the degree of dissociation of the components and the reaction constant of donor-acceptor pair formation in solid solutions of semiconductors with heterovalent substitution from the results of microhardness measurements is proposed. The estimated interaction energies of donor-acceptor pairs in InAs and CdTe are close to the Conlomb energies.
|Translated title of the contribution
|Study of the Donor-acceptor Interaction in (InAs)1 - x(CdTe)x Solid Solutions by the Microhardness Method.
|Number of pages
|Published - 1981