Abstract
An anomalous concentration dependence of the microhardness in (InAs)//1// minus //x(CdTe)//x solid solutions near the pure components is noted which is attributed to a change in the degree of dissociation of the components. A method of determining the degree of dissociation of the components and the reaction constant of donor-acceptor pair formation in solid solutions of semiconductors with heterovalent substitution from the results of microhardness measurements is proposed. The estimated interaction energies of donor-acceptor pairs in InAs and CdTe are close to the Conlomb energies.
Translated title of the contribution | Study of the Donor-acceptor Interaction in (InAs)1 - x(CdTe)x Solid Solutions by the Microhardness Method. |
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Original language | Russian |
Pages (from-to) | 1382-1384 |
Number of pages | 3 |
Journal | Neorganiceskie materialy |
Volume | 17 |
Issue number | 8 |
State | Published - 1981 |