Lifetime of hafnium oxide dielectric in thin-film devices fabricated on deformable softening polymer substrate

Keyphrases

• Polymer Substrate 100%
• HfO2 100%
• Electrical Behavior 100%
• Hafnium Oxide 100%
• Thin Film Devices 100%
• Oxide Dielectrics 100%
• Softening Polymers 100%
• Shape Memory Polymer 100%
• Deformable 100%
• Dielectric Constant 50%
• Capacitors 50%
• Thin-film Transistors 50%
• High-k Dielectric 50%
• Gate Dielectric 50%
• Amorphous InGaZnO (a-IGZO) 50%
• Zinc Oxide Thin Films 50%
• Oxide Thin-film Transistors 50%
• Atomic Layer Deposition 50%
• Flexible Substrate 50%
• Storage Modulus 50%
• Forming Gas 50%
• HfO2 Films 50%
• Mobility Values 50%
• Active Materials 50%
• Time-dependent Dielectric Breakdown 50%
• Annealing Treatment 50%
• Electrical Reliability 50%
• Thermosets 50%
• Leakage Current Analysis 50%
• Stable Shape 50%
• Breakdown Current 50%
• Device Dimensions 50%
• Softening Property 50%
• Lifetime Projection 50%
• Globally Stable 50%
• Channel Dimensions 50%
• Thiol-acrylate 50%

Material Science

• Dielectric Material 100%
• Oxide Compound 100%
• Thin Films 100%
• Hafnium 100%
• Thin-Film Transistor 66%
• Shape Memory Polymer 66%
• Film 33%
• Elastic Moduli 33%
• Permittivity 33%
• Capacitor 33%
• Annealing 33%
• Zinc Oxide 33%
• Gallium 33%
• Indium 33%
• Electrical Breakdown 33%
• Thermoset Plastics 33%