Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory

Duo Mao, Israel Mejia, Ana L. Salas-Villasenor, Harvey J. Stiegler, Bruce E. Gnade, Manuel A. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	3442-3447
Number of pages	6
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2014.2347053
State	Published - 1 Oct 2014
Externally published	Yes

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title = "Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory",

author = "Duo Mao and Israel Mejia and Salas-Villasenor, {Ana L.} and Stiegler, {Harvey J.} and Gnade, {Bruce E.} and Quevedo-Lopez, {Manuel A.}",

year = "2014",

month = oct,

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doi = "10.1109/TED.2014.2347053",

language = "American English",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory

AU - Mao, Duo

AU - Mejia, Israel

AU - Salas-Villasenor, Ana L.

AU - Stiegler, Harvey J.

AU - Gnade, Bruce E.

AU - Quevedo-Lopez, Manuel A.

PY - 2014/10/1

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DO - 10.1109/TED.2014.2347053

M3 - Article

SP - 3442

EP - 3447

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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