Original language | American English |
---|---|
Pages (from-to) | 3442-3447 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
DOIs | |
State | Published - 1 Oct 2014 |
Externally published | Yes |
Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory
Duo Mao, Israel Mejia, Ana L. Salas-Villasenor, Harvey J. Stiegler, Bruce E. Gnade, Manuel A. Quevedo-Lopez
Research output: Contribution to journal › Article › peer-review
1
Scopus
citations