Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics

P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, B. H. Lee, G. Pant, M. J. Kim, R. M. Wallace, B. E. Gnade

Research output: Contribution to journalArticle

22 Scopus citations
Original languageAmerican English
JournalApplied Physics Letters
DOIs
StatePublished - 29 Dec 2006
Externally publishedYes

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