Mobility enhancement of high-k gate stacks through reduced transient charging

P. D. Kirsch; J. H. Sim; S. C. Song; S. Krishnan; J. Peterson; H. J. Li; M. Quevedo-Lopez; C. D. Young; R. Choi; N. Moumen; P. Majhi; Q. Wang; J. G. Ekerdt; G. Bersuker; B. H. Lee

doi:10.1109/ESSDER.2005.1546661

Mobility enhancement of high-k gate stacks through reduced transient charging

P. D. Kirsch, J. H. Sim, S. C. Song, S. Krishnan, J. Peterson, H. J. Li, M. Quevedo-Lopez, C. D. Young, R. Choi, N. Moumen, P. Majhi, Q. Wang, J. G. Ekerdt, G. Bersuker, B. H. Lee

Research output: Contribution to conference › Paper

25 Scopus citations

Original language	American English
Pages	367-370
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546661
State	Published - 1 Dec 2005
Externally published	Yes
Event	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference - Duration: 1 Dec 2005 → …

Conference

Conference	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Period	1/12/05 → …

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10.1109/ESSDER.2005.1546661

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Kirsch, P. D., Sim, J. H., Song, S. C., Krishnan, S., Peterson, J., Li, H. J., Quevedo-Lopez, M., Young, C. D., Choi, R., Moumen, N., Majhi, P., Wang, Q., Ekerdt, J. G., Bersuker, G., & Lee, B. H. (2005). Mobility enhancement of high-k gate stacks through reduced transient charging. 367-370. Paper presented at Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, . https://doi.org/10.1109/ESSDER.2005.1546661

Kirsch, P. D. ; Sim, J. H. ; Song, S. C. ; Krishnan, S. ; Peterson, J. ; Li, H. J. ; Quevedo-Lopez, M. ; Young, C. D. ; Choi, R. ; Moumen, N. ; Majhi, P. ; Wang, Q. ; Ekerdt, J. G. ; Bersuker, G. ; Lee, B. H. / Mobility enhancement of high-k gate stacks through reduced transient charging. Paper presented at Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, .4 p.

@conference{13bf3df5229d4861acbdb8b7d282bb6c,

title = "Mobility enhancement of high-k gate stacks through reduced transient charging",

author = "Kirsch, {P. D.} and Sim, {J. H.} and Song, {S. C.} and S. Krishnan and J. Peterson and Li, {H. J.} and M. Quevedo-Lopez and Young, {C. D.} and R. Choi and N. Moumen and P. Majhi and Q. Wang and Ekerdt, {J. G.} and G. Bersuker and Lee, {B. H.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/ESSDER.2005.1546661",

language = "American English",

pages = "367--370",

note = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 01-12-2005",

}

Kirsch, PD, Sim, JH, Song, SC, Krishnan, S, Peterson, J, Li, HJ, Quevedo-Lopez, M, Young, CD, Choi, R, Moumen, N, Majhi, P, Wang, Q, Ekerdt, JG, Bersuker, G & Lee, BH 2005, 'Mobility enhancement of high-k gate stacks through reduced transient charging', Paper presented at Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, 1/12/05 pp. 367-370. https://doi.org/10.1109/ESSDER.2005.1546661

Mobility enhancement of high-k gate stacks through reduced transient charging. / Kirsch, P. D.; Sim, J. H.; Song, S. C.; Krishnan, S.; Peterson, J.; Li, H. J.; Quevedo-Lopez, M.; Young, C. D.; Choi, R.; Moumen, N.; Majhi, P.; Wang, Q.; Ekerdt, J. G.; Bersuker, G.; Lee, B. H.

2005. 367-370 Paper presented at Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - Mobility enhancement of high-k gate stacks through reduced transient charging

AU - Kirsch, P. D.

AU - Sim, J. H.

AU - Song, S. C.

AU - Krishnan, S.

AU - Peterson, J.

AU - Li, H. J.

AU - Quevedo-Lopez, M.

AU - Young, C. D.

AU - Choi, R.

AU - Moumen, N.

AU - Majhi, P.

AU - Wang, Q.

AU - Ekerdt, J. G.

AU - Bersuker, G.

AU - Lee, B. H.

PY - 2005/12/1

Y1 - 2005/12/1

U2 - 10.1109/ESSDER.2005.1546661

DO - 10.1109/ESSDER.2005.1546661

M3 - Paper

SP - 367

EP - 370

T2 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Y2 - 1 December 2005

ER -