Mobility enhancement of high-k gate stacks through reduced transient charging

P. D. Kirsch; J. H. Sim; S. C. Song; S. Krishnan; J. Peterson; H. J. Li; M. Quevedo-Lopez; C. D. Young; R. Choi; N. Moumen; P. Majhi; Q. Wang; J. G. Ekerdt; G. Bersuker; B. H. Lee

doi:10.1109/ESSDER.2005.1546661

Mobility enhancement of high-k gate stacks through reduced transient charging

P. D. Kirsch^*, J. H. Sim, S. C. Song, S. Krishnan, J. Peterson, H. J. Li, M. Quevedo-Lopez, C. D. Young, R. Choi, N. Moumen, P. Majhi, Q. Wang, J. G. Ekerdt, G. Bersuker, B. H. Lee

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

26 Scopus citations

Abstract

We report a high performance NFET with a HfO₂/TiN gate stack showing high field (1 MV/cm) D.C. mobility of 194 cm²/V-s (80% univ. SiO₂) and peak D.C. mobility of 239 cm²/V-s at EOT=9.5Å. These mobility results are among the best reported for HfO ₂ with sub-10 Å EOT and represent a potential gate dielectric solution for 45 nm CMOS technologies. A 2× mobility improvement was realized by thinning HfO₂ from T_phys=4.0 nm to 2.0 nm. The mechanism for mobility improvement is shown to be reduced transient charge trapping. Issues associated with scaling HfO₂ including film continuity, density and growth incubation are studied with low energy ion scattering (LEIS), X-ray reflectivity (XRR) and Rutherford backscattering (RBS) and indicate atomic layer deposition (ALD) HfO₂ can scale below T_phys= 2.0 nm. While the mobility advancement with 2.0 nm HfO ₂ is important, an additional concurrent advancement is improved V_t stability. Constant voltage stress results show ΔV _t improves 2× after 1000s stress at 1.8V as thickness is reduced in the range 2.0-4.0 nm.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	367-370
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546661
State	Published - 2005
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 12 Sep 2005 → 16 Sep 2005

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	12/09/05 → 16/09/05

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10.1109/ESSDER.2005.1546661

Cite this

Kirsch, P. D., Sim, J. H., Song, S. C., Krishnan, S., Peterson, J., Li, H. J., Quevedo-Lopez, M., Young, C. D., Choi, R., Moumen, N., Majhi, P., Wang, Q., Ekerdt, J. G., Bersuker, G., & Lee, B. H. (2005). Mobility enhancement of high-k gate stacks through reduced transient charging. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 367-370). Article 1546661 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546661

@inproceedings{7c74db684446406c8de2bebe6b7c9df2,

title = "Mobility enhancement of high-k gate stacks through reduced transient charging",

abstract = "We report a high performance NFET with a HfO2/TiN gate stack showing high field (1 MV/cm) D.C. mobility of 194 cm2/V-s (80% univ. SiO2) and peak D.C. mobility of 239 cm2/V-s at EOT=9.5{\AA}. These mobility results are among the best reported for HfO 2 with sub-10 {\AA} EOT and represent a potential gate dielectric solution for 45 nm CMOS technologies. A 2× mobility improvement was realized by thinning HfO2 from Tphys=4.0 nm to 2.0 nm. The mechanism for mobility improvement is shown to be reduced transient charge trapping. Issues associated with scaling HfO2 including film continuity, density and growth incubation are studied with low energy ion scattering (LEIS), X-ray reflectivity (XRR) and Rutherford backscattering (RBS) and indicate atomic layer deposition (ALD) HfO2 can scale below Tphys= 2.0 nm. While the mobility advancement with 2.0 nm HfO 2 is important, an additional concurrent advancement is improved Vt stability. Constant voltage stress results show ΔV t improves 2× after 1000s stress at 1.8V as thickness is reduced in the range 2.0-4.0 nm.",

author = "Kirsch, {P. D.} and Sim, {J. H.} and Song, {S. C.} and S. Krishnan and J. Peterson and Li, {H. J.} and M. Quevedo-Lopez and Young, {C. D.} and R. Choi and N. Moumen and P. Majhi and Q. Wang and Ekerdt, {J. G.} and G. Bersuker and Lee, {B. H.}",

year = "2005",

doi = "10.1109/ESSDER.2005.1546661",

language = "Ingl{\'e}s",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "367--370",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

}

Kirsch, PD, Sim, JH, Song, SC, Krishnan, S, Peterson, J, Li, HJ, Quevedo-Lopez, M, Young, CD, Choi, R, Moumen, N, Majhi, P, Wang, Q, Ekerdt, JG, Bersuker, G & Lee, BH 2005, Mobility enhancement of high-k gate stacks through reduced transient charging. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546661, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 367-370, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 12/09/05. https://doi.org/10.1109/ESSDER.2005.1546661

Mobility enhancement of high-k gate stacks through reduced transient charging. / Kirsch, P. D.; Sim, J. H.; Song, S. C. et al.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 367-370 1546661 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mobility enhancement of high-k gate stacks through reduced transient charging

AU - Kirsch, P. D.

AU - Sim, J. H.

AU - Song, S. C.

AU - Krishnan, S.

AU - Peterson, J.

AU - Li, H. J.

AU - Quevedo-Lopez, M.

AU - Young, C. D.

AU - Choi, R.

AU - Moumen, N.

AU - Majhi, P.

AU - Wang, Q.

AU - Ekerdt, J. G.

AU - Bersuker, G.

AU - Lee, B. H.

PY - 2005

Y1 - 2005

N2 - We report a high performance NFET with a HfO2/TiN gate stack showing high field (1 MV/cm) D.C. mobility of 194 cm2/V-s (80% univ. SiO2) and peak D.C. mobility of 239 cm2/V-s at EOT=9.5Å. These mobility results are among the best reported for HfO 2 with sub-10 Å EOT and represent a potential gate dielectric solution for 45 nm CMOS technologies. A 2× mobility improvement was realized by thinning HfO2 from Tphys=4.0 nm to 2.0 nm. The mechanism for mobility improvement is shown to be reduced transient charge trapping. Issues associated with scaling HfO2 including film continuity, density and growth incubation are studied with low energy ion scattering (LEIS), X-ray reflectivity (XRR) and Rutherford backscattering (RBS) and indicate atomic layer deposition (ALD) HfO2 can scale below Tphys= 2.0 nm. While the mobility advancement with 2.0 nm HfO 2 is important, an additional concurrent advancement is improved Vt stability. Constant voltage stress results show ΔV t improves 2× after 1000s stress at 1.8V as thickness is reduced in the range 2.0-4.0 nm.

AB - We report a high performance NFET with a HfO2/TiN gate stack showing high field (1 MV/cm) D.C. mobility of 194 cm2/V-s (80% univ. SiO2) and peak D.C. mobility of 239 cm2/V-s at EOT=9.5Å. These mobility results are among the best reported for HfO 2 with sub-10 Å EOT and represent a potential gate dielectric solution for 45 nm CMOS technologies. A 2× mobility improvement was realized by thinning HfO2 from Tphys=4.0 nm to 2.0 nm. The mechanism for mobility improvement is shown to be reduced transient charge trapping. Issues associated with scaling HfO2 including film continuity, density and growth incubation are studied with low energy ion scattering (LEIS), X-ray reflectivity (XRR) and Rutherford backscattering (RBS) and indicate atomic layer deposition (ALD) HfO2 can scale below Tphys= 2.0 nm. While the mobility advancement with 2.0 nm HfO 2 is important, an additional concurrent advancement is improved Vt stability. Constant voltage stress results show ΔV t improves 2× after 1000s stress at 1.8V as thickness is reduced in the range 2.0-4.0 nm.

UR - http://www.scopus.com/inward/record.url?scp=33746489728&partnerID=8YFLogxK

U2 - 10.1109/ESSDER.2005.1546661

DO - 10.1109/ESSDER.2005.1546661

M3 - Contribución a la conferencia

AN - SCOPUS:33746489728

SN - 0780392035

SN - 9780780392038

T3 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

SP - 367

EP - 370

BT - Proceedings of ESSDERC 2005

T2 - ESSDERC 2005: 35th European Solid-State Device Research Conference

Y2 - 12 September 2005 through 16 September 2005

ER -

Kirsch PD, Sim JH, Song SC, Krishnan S, Peterson J, Li HJ et al. Mobility enhancement of high-k gate stacks through reduced transient charging. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 367-370. 1546661. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference). doi: 10.1109/ESSDER.2005.1546661

Mobility enhancement of high-k gate stacks through reduced transient charging

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