Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs

Israel Mejia; Ana L. Salas-Villasenor; Adrian Avendano-Bolivar; Bruce E. Gnade; Manuel A. Quevedo-Lopez

doi:10.1109/ICCDCS.2012.6188882

Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs

Israel Mejia^*, Ana L. Salas-Villasenor, Adrian Avendano-Bolivar, Bruce E. Gnade, Manuel A. Quevedo-Lopez

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this work we demonstrate that the unified model and parameter extraction method (UMEM) can be used to describe the behavior of hybrid complementary metal-oxide-semiconductor thin film transistors (CMOS TFTs) fabricated with cadmium sulfide (CdS) and pentacene as n-type and p-type active layer, respectively. Both devices were fabricated using a bottom gate configuration and top source-drain (SD) contacts. In particular, we describe the effect of semiconductor defects using the effective medium approximation, which considers a localized charge distribution in the bandgap of the semiconductor. Extracted parameters from UMEM were used in HSPICE to simulate the CMOS inverters fabricated previously by our group.

Original language	English
Title of host publication	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
DOIs	https://doi.org/10.1109/ICCDCS.2012.6188882
State	Published - 2012
Externally published	Yes
Event	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico Duration: 14 Mar 2012 → 17 Mar 2012

Publication series

Name	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Conference

Conference	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Country/Territory	Mexico
City	Playa del Carmen
Period	14/03/12 → 17/03/12

Keywords

Cadmium Sulfide (CdS)
Hybrid CMOS
Inverter
Pentacene
TFT
UMEM

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10.1109/ICCDCS.2012.6188882

Cite this

Mejia, I., Salas-Villasenor, A. L., Avendano-Bolivar, A., Gnade, B. E., & Quevedo-Lopez, M. A. (2012). Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 Article 6188882 (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012). https://doi.org/10.1109/ICCDCS.2012.6188882

@inproceedings{4244a599a59f434aa2654ed90b6813c4,

title = "Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs",

abstract = "In this work we demonstrate that the unified model and parameter extraction method (UMEM) can be used to describe the behavior of hybrid complementary metal-oxide-semiconductor thin film transistors (CMOS TFTs) fabricated with cadmium sulfide (CdS) and pentacene as n-type and p-type active layer, respectively. Both devices were fabricated using a bottom gate configuration and top source-drain (SD) contacts. In particular, we describe the effect of semiconductor defects using the effective medium approximation, which considers a localized charge distribution in the bandgap of the semiconductor. Extracted parameters from UMEM were used in HSPICE to simulate the CMOS inverters fabricated previously by our group.",

keywords = "Cadmium Sulfide (CdS), Hybrid CMOS, Inverter, Pentacene, TFT, UMEM",

author = "Israel Mejia and Salas-Villasenor, {Ana L.} and Adrian Avendano-Bolivar and Gnade, {Bruce E.} and Quevedo-Lopez, {Manuel A.}",

year = "2012",

doi = "10.1109/ICCDCS.2012.6188882",

language = "Ingl{\'e}s",

isbn = "9781457711169",

series = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012",

booktitle = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012",

note = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 ; Conference date: 14-03-2012 Through 17-03-2012",

}

Mejia, I, Salas-Villasenor, AL, Avendano-Bolivar, A, Gnade, BE & Quevedo-Lopez, MA 2012, Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs. in 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012., 6188882, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, Playa del Carmen, Mexico, 14/03/12. https://doi.org/10.1109/ICCDCS.2012.6188882

Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs. / Mejia, Israel; Salas-Villasenor, Ana L.; Avendano-Bolivar, Adrian et al.
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012. 2012. 6188882 (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs

AU - Mejia, Israel

AU - Salas-Villasenor, Ana L.

AU - Avendano-Bolivar, Adrian

AU - Gnade, Bruce E.

AU - Quevedo-Lopez, Manuel A.

PY - 2012

Y1 - 2012

N2 - In this work we demonstrate that the unified model and parameter extraction method (UMEM) can be used to describe the behavior of hybrid complementary metal-oxide-semiconductor thin film transistors (CMOS TFTs) fabricated with cadmium sulfide (CdS) and pentacene as n-type and p-type active layer, respectively. Both devices were fabricated using a bottom gate configuration and top source-drain (SD) contacts. In particular, we describe the effect of semiconductor defects using the effective medium approximation, which considers a localized charge distribution in the bandgap of the semiconductor. Extracted parameters from UMEM were used in HSPICE to simulate the CMOS inverters fabricated previously by our group.

AB - In this work we demonstrate that the unified model and parameter extraction method (UMEM) can be used to describe the behavior of hybrid complementary metal-oxide-semiconductor thin film transistors (CMOS TFTs) fabricated with cadmium sulfide (CdS) and pentacene as n-type and p-type active layer, respectively. Both devices were fabricated using a bottom gate configuration and top source-drain (SD) contacts. In particular, we describe the effect of semiconductor defects using the effective medium approximation, which considers a localized charge distribution in the bandgap of the semiconductor. Extracted parameters from UMEM were used in HSPICE to simulate the CMOS inverters fabricated previously by our group.

KW - Cadmium Sulfide (CdS)

KW - Hybrid CMOS

KW - Inverter

KW - Pentacene

KW - TFT

KW - UMEM

UR - http://www.scopus.com/inward/record.url?scp=84861004717&partnerID=8YFLogxK

U2 - 10.1109/ICCDCS.2012.6188882

DO - 10.1109/ICCDCS.2012.6188882

M3 - Contribución a la conferencia

AN - SCOPUS:84861004717

SN - 9781457711169

T3 - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

BT - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

T2 - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Y2 - 14 March 2012 through 17 March 2012

ER -

Mejia I, Salas-Villasenor AL, Avendano-Bolivar A, Gnade BE, Quevedo-Lopez MA. Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012. 2012. 6188882. (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012). doi: 10.1109/ICCDCS.2012.6188882

Modeling and SPICE simulation of CdS-pentacene hybrid CMOS TFTs

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Keywords

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