Modeling and SPICE Simulation of the CdS/CdTe Neutron Detectors Integrated with Si-Poly TFTs Amplifiers

Carlos A. Hernandez-Gutierrez, Carlos Avila-Avendano, Horacio I. Solis-Cisneros, Jorge Conde, Perla Y. Sevilla-Camacho, Manuel A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this work, it is presented a unified model to integrate a radiation detector on a single chip using TFTs-based amplifiers, to fabricate a low-cost thermal neutron detector system. The model is based on the current-voltage experimental measurements of the CdS/CdTe detector and CMOS Si-Poly TFTs technology. Parameters obtained by I-V and C - V analysis were introduced into Smart SPICE to design the amplifiers. The output voltage was simulated for a neutron capture event. Three amplification topologies were studied, obtaining an output voltage in the range of 180 to 260 mV with a generated photocurrent pulse around 3.5 \mu \text{A}, which is high enough to be interfaced with a microcontroller. The neutron detector is integrated into TFT amplifiers with a gain of around 50 dB and bandwidth of 4.7 MHz at -3 dB.

Original languageEnglish
Pages (from-to)1310-1315
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume69
Issue number6
DOIs
StatePublished - 1 Jun 2022

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • Radiation detector
  • TFTs
  • transimpedance amplifier

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