Modeling and SPICE simulation of the CdS/CdTe neutron detectors integrated with Si-Poly TFTs amplifiers

Carlos A. Hernandez-Gutierrez, Carlos Avila-Avendano, Horacio I. Solis-Cisneros, Jorge Conde, Perla Y. Sevilla-Camacho, Manuel A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, it is presented a unified model to integrate a radiation detector on a single chip using TFTs-based amplifiers, to fabricate a low-cost thermal neutron detector system. The model is based on the current-voltage experimental measurements of the CdS/CdTe detector and CMOS Si-Poly TFTs technology. Parameters obtained by I-V and C-V analysis were introduced into Smart SPICE to design the amplifiers. The output voltage was simulated for a neutron capture event. Three amplification topologies were studied, obtaining an output voltage in the range of 180 to 260 mV with a generated photocurrent pulse around 3.5 lA, which is high enough to be interfaced with a microcontroller. The neutron detector is integrated into TFT amplifiers with a gain of around 50 dB and bandwidth of 4.7 MHz at -3 dB.

Original languageEnglish
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
IEEE

Keywords

  • Capacitance
  • Detectors
  • Integrated circuit modeling
  • Neutrons
  • Radiation detector
  • SPICE
  • TFTs
  • Thin film transistors
  • Topology
  • Transimpedance amplifier

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