Morphological and structural study of the growth of some cdte thin films on al2 o3/HD-SI, HFO2/HD-SI and sio2/hd-si substrates, by pulsed laser deposition

L. I. Lomeli-Galaz, M. A. Quevedo-Lopez, A. G. Rojas-Hernandez, A. de Leon*, A. Apolinar-Iribe, R. Ochoa-Landin, G. Valencia-Palomo, S. J. Castillo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this research we utilized pulsed laser deposition (PLD) to deposit layers of the material Cadmium telluride, which is grown on 3 different substrates: Al2 O3/HD-Si, HfO2/HD-Si y SiO2/HD-Si. Afterwards, the material was characterized to observe its morphological and structural properties. The first results show us the compactness and the transversal to the substrate surface CdTe growth. It portrayed a fluctuating kinetics in its thickness of 446, 892, 814 and 742 nm at substrate temperatures of 100, 200 and 400ºC, respectively. When the substrate is treated previously at 1000ºC and the substrates are maintained at the same temperatures during growth, thickness variation decreased, with values of 999, 964, 818 and 591 nm, respectively. A condition where the CdTe films only show a cubic phase and another one with a mixture of hexagonal and cubical phases (PDF#65-1085, PDF# 19-0193). Crystallite size calculations were performed using X-ray patterns, which range from 8.74 to 26.09 nm. SEM micrographies were obtained where diverse morphologies are observed. These can be useful on photovoltaic devices, sensors or optoelectronics in general.

Original languageEnglish
Pages (from-to)353-364
Number of pages12
JournalChalcogenide Letters
Volume15
Issue number6
StatePublished - Jun 2018

Bibliographical note

Publisher Copyright:
© 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.

Keywords

  • Cadmium telluride
  • Electronic devices
  • Pulsed laser deposition
  • Semiconductors

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