TY - JOUR
T1 - Morphological and structural study of the growth of some cdte thin films on al 2 o 3 /HD-SI, HFO 2 /HD-SI and sio 2 /hd-si substrates, by pulsed laser deposition
AU - Lomeli-Galaz, L. I.
AU - Quevedo-Lopez, M. A.
AU - Rojas-Hernandez, A. G.
AU - de Leon, A.
AU - Apolinar-Iribe, A.
AU - Ochoa-Landin, R.
AU - Valencia-Palomo, G.
AU - Castillo, S. J.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - © 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved. In this research we utilized pulsed laser deposition (PLD) to deposit layers of the material Cadmium telluride, which is grown on 3 different substrates: Al 2 O 3 /HD-Si, HfO 2 /HD-Si y SiO 2 /HD-Si. Afterwards, the material was characterized to observe its morphological and structural properties. The first results show us the compactness and the transversal to the substrate surface CdTe growth. It portrayed a fluctuating kinetics in its thickness of 446, 892, 814 and 742 nm at substrate temperatures of 100, 200 and 400ºC, respectively. When the substrate is treated previously at 1000ºC and the substrates are maintained at the same temperatures during growth, thickness variation decreased, with values of 999, 964, 818 and 591 nm, respectively. A condition where the CdTe films only show a cubic phase and another one with a mixture of hexagonal and cubical phases (PDF#65-1085, PDF# 19-0193). Crystallite size calculations were performed using X-ray patterns, which range from 8.74 to 26.09 nm. SEM micrographies were obtained where diverse morphologies are observed. These can be useful on photovoltaic devices, sensors or optoelectronics in general.
AB - © 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved. In this research we utilized pulsed laser deposition (PLD) to deposit layers of the material Cadmium telluride, which is grown on 3 different substrates: Al 2 O 3 /HD-Si, HfO 2 /HD-Si y SiO 2 /HD-Si. Afterwards, the material was characterized to observe its morphological and structural properties. The first results show us the compactness and the transversal to the substrate surface CdTe growth. It portrayed a fluctuating kinetics in its thickness of 446, 892, 814 and 742 nm at substrate temperatures of 100, 200 and 400ºC, respectively. When the substrate is treated previously at 1000ºC and the substrates are maintained at the same temperatures during growth, thickness variation decreased, with values of 999, 964, 818 and 591 nm, respectively. A condition where the CdTe films only show a cubic phase and another one with a mixture of hexagonal and cubical phases (PDF#65-1085, PDF# 19-0193). Crystallite size calculations were performed using X-ray patterns, which range from 8.74 to 26.09 nm. SEM micrographies were obtained where diverse morphologies are observed. These can be useful on photovoltaic devices, sensors or optoelectronics in general.
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M3 - Article
SP - 353
EP - 364
JO - Chalcogenide Letters
JF - Chalcogenide Letters
SN - 1584-8663
ER -