Nanocrystalline ZnO TFTs Using 15-nm Thick Al<inf>2</inf>O<inf>3</inf>Gate Insulator: Experiment and Simulation

Richard A. Chapman, Rodolfo A. Rodriguez-Davila, Israel Mejia, Manuel Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	3936-3943
Number of pages	8
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2016.2597284
State	Published - 1 Oct 2016
Externally published	Yes

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@article{d20d444eb66c4f9eae0afacd720c217a,

title = "Nanocrystalline ZnO TFTs Using 15-nm Thick Al2O3Gate Insulator: Experiment and Simulation",

author = "Chapman, {Richard A.} and Rodriguez-Davila, {Rodolfo A.} and Israel Mejia and Manuel Quevedo-Lopez",

year = "2016",

month = oct,

day = "1",

doi = "10.1109/TED.2016.2597284",

language = "American English",

pages = "3936--3943",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Nanocrystalline ZnO TFTs Using 15-nm Thick Al2O3Gate Insulator: Experiment and Simulation

AU - Chapman, Richard A.

AU - Rodriguez-Davila, Rodolfo A.

AU - Mejia, Israel

AU - Quevedo-Lopez, Manuel

PY - 2016/10/1

Y1 - 2016/10/1

U2 - 10.1109/TED.2016.2597284

DO - 10.1109/TED.2016.2597284

M3 - Article

SP - 3936

EP - 3943

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -