Nanostructured fibers of A-SI<inf>3</inf>N<inf>4</inf>deposited by HYSY-CVD

E. B. Acosta-Enriquez, M. C. Acosta-Enriquez, R. Castillo-Ortega, M. A.E. Zayas, M. I. Pech-Canul

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


© 2016, Inst Materials Physics. All rights reserved. The alpha type silicon nitride nanostructured fibers were obtained by hybrid system chemical vapor deposition (HYSY-CVD) method, with low manufacturing costs, fabricating good quality deposits at atmospheric pressure. The α-Si3N4fibers on silicon wafers <111> were produced with a diameter between 400 to 500 nm using a temperature of 1200 °C. FTIR showed that the deposit is free of hydrogen and study shows Raman vibrational modes corresponding to α-Si3N4.
Original languageAmerican English
Pages (from-to)601-605
Number of pages5
JournalDigest Journal of Nanomaterials and Biostructures
StatePublished - 1 Apr 2016


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